Wiring Layer and Manufacturing Method Therefor

ABSTRACT

To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.

This application is a continuation of copending U.S. application Ser.No. 16/423,884, filed on May 28, 2019 which is a continuation of U.S.application Ser. No. 15/708,714, filed on Sep. 19, 2017 (now U.S. Pat.No. 10,304,864 issued May 28, 2019) which is a continuation of U.S.application Ser. No. 14/870,912, filed on Sep. 30, 2015 (now U.S. Pat.No. 9,773,820 issued Sep. 26, 2017) which are all incorporated herein byreference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to an object, a method, or a manufacturingmethod. The present invention relates to a process, a machine,manufacture, or a composition of matter. One embodiment of the presentinvention relates to a semiconductor device, a display device, alight-emitting device, a power storage device, an imaging device, astorage device, a driving method thereof, or a manufacturing methodthereof. In particular, one embodiment of the present invention relatesto a semiconductor device, a display device, or a light-emitting deviceeach including an oxide semiconductor.

In this specification and the like, a semiconductor device generallymeans a device that can function by utilizing semiconductorcharacteristics. A display device, a light-emitting device, a lightingdevice, an electro-optical device, a semiconductor circuit, and anelectronic device include a semiconductor device in some cases.

2. Description of the Related Art

As silicon which is used as a semiconductor of a transistor, eitheramorphous silicon or polycrystalline silicon is used depending on thepurpose. For example, for a transistor included in a large displaydevice, it is preferable to use amorphous silicon, which can be used toform a film on a large substrate with the established technique. For atransistor included in a high-performance display device where a drivercircuit and a pixel portion are formed over the same substrate, it ispreferable to use polycrystalline silicon, which can be used to form atransistor having a high field-effect mobility. As a method for formingpolycrystalline silicon, high-temperature heat treatment or laser lighttreatment which is performed on amorphous silicon has been known.

In recent years, transistors including oxide semiconductors (typically,an In—Ga—Zn oxide) have been actively developed. The transistorsincluding oxide semiconductors have features different from those of thetransistors including amorphous silicon or polycrystalline silicon. Forexample, a display device for which a transistor including an oxidesemiconductor is used is known to have low power consumption.

It is known that a transistor including an oxide semiconductor has anextremely low leakage current in an off state. For example, alow-power-consumption CPU utilizing a characteristic of low leakagecurrent of the transistor including an oxide semiconductor has beendisclosed (see Patent Document 1).

For reduction of power consumption by power gating, the transistorincluding an oxide semiconductor preferably has normally-off electricalcharacteristics. As a method for making the transistor including anoxide semiconductor have normally-off electrical characteristics bycontrolling the threshold voltage of the transistor, Patent Document 2has disclosed a method in which a floating gate is provided in a regionoverlapping with the oxide semiconductor and negative fixed charge isinjected into the floating gate.

An oxide semiconductor can be deposited by a sputtering method or thelike, and thus can be used in a transistor included in a large displaydevice. Because a transistor including an oxide semiconductor has highfield-effect mobility, a high-performance display device in which adriver circuit and a pixel portion are formed over the same substratecan be obtained. In addition, there is an advantage that capitalinvestment can be reduced because part of production equipment for atransistor including amorphous silicon or a transistor includingpolycrystalline silicon can be retrofitted and utilized.

Oxide semiconductors have a long history, and in 1985, synthesis of anIn—Ga—Zn oxide crystal was reported (see Non-Patent Document 1).Furthermore, in 1995, it was reported that an In—Ga—Zn oxide has ahomologous structure and is represented by a composition formulaInGaO₃(ZnO)_(m) (m is a natural number) (see Non-Patent Document 2).

In 1995, a transistor including an oxide semiconductor was invented, andits electrical characteristics were disclosed (see Patent Document 3).

In 2014, transistors including a crystalline oxide semiconductor werereported (see Non-Patent Documents 3 and 4). The transistors in thesereports include a c-axis aligned crystalline oxide semiconductor(CAAC-OS) and thus are capable of mass-production and have excellentelectrical characteristics and high reliability.

With miniaturization of an integrated circuit, reduction in theresistance of a wiring layer and increase in the number of layers of thewiring layer have proceeded, and it is necessary to planarize the wiringlayer. To achieve these, a damascene method in which a wiring layer isembedded in an interlayer insulating film has been widely used (seeNon-patent Document 5).

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2012-257187-   [Patent Document 2] Japanese Published Patent Application No.    2013-247143-   [Patent Document 3] Japanese Published Patent Application No.    H11-505377

Non-Patent Document

-   [Non-Patent Document 1] N. Kimizuka and T. Mohri, Journal of Solid    State Chemistry, Vol. 60, 1985, pp. 382-384-   [Non-Patent Document 2] N. Kimizuka, M. Isobe and M. Nakamura,    Journal of Solid State Chemistry, Vol. 116, 1995, pp. 170-178-   [Non-Patent Document 3] S. Yamazaki, T. Hirohashi, M. Takahashi, S.    Adachi, M. Tsubuku, J. Koezuka, K. Okazaki, Y. Kanzaki, H.    Matsukizono, S. Kaneko, S. Mori, and T. Matsuo, Journal of the    Society for Information Display, Vol. 22, Issue 1, 2014, pp. 55-67-   [Non-Patent Document 4] S. Yamazaki, T. Atsumi, K. Dairiki, K.    Okazaki, and N. Kimizuka, ECS Journal of Solid State Science and    Technology, Vol. 3, Issue 9, 2014, pp. Q3012-Q3022-   [Non-Patent Document 5] C. W. Kaanta, S. G. Bombardier, W. J.    Cote, W. R. Hill, G. Kerszykowski, H. S. Landis, D. J.    Poinchexter, C. W. Pollard, G. H. Ross, J. G. Ryan, S. Wolff,    and J. E. Cronin, Dual Damascene: A ULSI Wiring Technology, VMIC    Conference, 1991, pp. 144-152

SUMMARY OF THE INVENTION

An object of one embodiment of the present invention is to provide aminiaturized semiconductor device. Another object of one embodiment ofthe present invention is to provide a semiconductor device with lowpower consumption. Another object of one embodiment of the presentinvention is to provide a highly reliable semiconductor device. Anotherobject of one embodiment of the present invention is to provide asemiconductor device with a low off-state current. Another object of oneembodiment of the present invention is to provide a semiconductor devicecapable of retaining data for a long period. Another object of oneembodiment of the present invention is to provide a novel semiconductordevice. Another object of one embodiment of the present invention is toprovide an eye-friendly display device. Another object of one embodimentof the present invention is to provide a semiconductor device includinga transparent semiconductor.

Note that the description of these objects does not disturb theexistence of other objects. In one embodiment of the present invention,there is no need to achieve all the objects. Other objects will beapparent from and can be derived from the description of thespecification, the drawings, the claims, and the like.

(1) One embodiment of the present invention is a method formanufacturing a wiring layer. The method includes the following steps:forming a second insulator over a first insulator; forming a thirdinsulator over the second insulator; forming an opening in the thirdinsulator so that it reaches the second insulator; forming a firstconductor over the third insulator and in the opening; forming a secondconductor over the first conductor; and after forming the secondconductor, performing polishing treatment to remove portions of thefirst and second conductors above a top surface of the third insulator.An end of the first conductor is at a level lower than or equal to thetop level of the opening. The top surface of the second conductor is ata level lower than or equal to that of the end of the first conductor.

(2) One embodiment of the present invention is a method formanufacturing a wiring layer. The method includes the following steps:forming a second insulator over a first insulator; forming a thirdinsulator over the second insulator; forming an opening in the thirdinsulator so that it reaches the second insulator; forming a firstconductor over the third insulator and in the opening; forming a secondconductor over the first conductor; after forming the second conductor,performing polishing treatment to remove portions of the first andsecond conductors above a top surface of the third insulator; forming athird conductor over the second conductor and the third insulator; andperforming polishing treatment on the third conductor until the thirdinsulator is reached. An end of the first conductor is at a level lowerthan or equal to the top level of the opening. The top surface of thesecond conductor is at a level lower than or equal to that of the end ofthe first conductor. The third conductor is in contact with the topsurface of the second conductor, and is in contact with the end of thefirst conductor at the end of the opening.

(3) One embodiment of the present invention is a wiring layer includinga first insulator; a second insulator over the first insulator; a thirdinsulator over the second insulator; an opening formed in the thirdinsulator so as to reach the second insulator; a first conductor incontact with side surfaces and the bottom surface of the opening; and asecond conductor over the first conductor and in the opening. An end ofthe first conductor at an end of the opening is at a level lower than orequal to the top level of the opening. The top surface of the secondconductor is at a level lower than or equal to that of the end of thefirst conductor.

(4) One embodiment of the present invention is a wiring layer includinga first insulator; a second insulator over the first insulator; a thirdinsulator over the second insulator; an opening formed in the thirdinsulator so as to reach the second insulator; a first conductor incontact with side surfaces and the bottom surface of the opening; asecond conductor over the first conductor and in the opening; and athird conductor over the second conductor and in the opening. An end ofthe first conductor at an end of the opening is at a level lower than orequal to the top level of the opening. The top surface of the secondconductor is at a level lower than or equal to that of the end of thefirst conductor. The third conductor is in contact with the top surfaceof the second conductor, and is in contact with the end of the firstconductor at the end of the opening.

(5) One embodiment of the present invention is the wiring layerdescribed in (3) in which the first conductor allows less oxygen to passtherethrough than the second conductor.

(6) One embodiment of the present invention is the wiring layerdescribed in (4) in which the first conductor and the third conductorallow less oxygen to pass therethrough than the second conductor.

A miniaturized semiconductor device can be provided. Alternatively, asemiconductor device with low power consumption can be provided.Alternatively, a highly reliable semiconductor device can be provided.Alternatively, a semiconductor device with a low off-state current canbe provided. Alternatively, a semiconductor device capable of retainingdata for a long period can be provided. Alternatively, a novelsemiconductor device can be provided. Alternatively, an eye-friendlydisplay device can be provided. Alternatively, a semiconductor deviceincluding a transparent semiconductor can be provided.

Note that the description of these effects does not disturb theexistence of other effects. One embodiment of the present invention doesnot have to have all the effects listed above. Other effects will beapparent from and can be derived from the description of thespecification, the drawings, the claims, and the like.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B each show a cross-sectional view of a wiring layer ofone embodiment of the present invention;

FIGS. 2A to 2C illustrate a manufacturing method for a wiring layer ofone embodiment of the present invention;

FIGS. 3A to 3C are a top view and cross-sectional views of a transistorof one embodiment of the present invention;

FIGS. 4A to 4C are cross-sectional views and a band diagram of atransistor of one embodiment of the present invention;

FIGS. 5A to 5D are Cs-corrected high-resolution TEM images of a crosssection of a CAAC-OS and a cross-sectional schematic view of a CAAC-OS;

FIGS. 6A to 6D are Cs-corrected high-resolution TEM images of a plane ofa CAAC-OS;

FIGS. 7A to 7C show structural analysis of a CAAC-OS and a singlecrystal oxide semiconductor by XRD;

FIGS. 8A and 8B show electron diffraction patterns of a CAAC-OS;

FIG. 9 shows a change in a crystal part of an In—Ga—Zn oxide by electronirradiation;

FIG. 10A is a circuit diagram of a semiconductor device of oneembodiment of the present invention, and FIG. 10B is a cross-sectionalview thereof;

FIG. 11 is a cross-sectional view of a semiconductor device of oneembodiment of the present invention;

FIG. 12 is a cross-sectional view of a semiconductor device of oneembodiment of the present invention;

FIGS. 13A and 13B are top views each illustrating a semiconductor deviceof one embodiment of the present invention;

FIGS. 14A and 14B are block diagrams each illustrating a semiconductordevice of one embodiment of the present invention;

FIGS. 15A and 15B are cross-sectional views each illustrating asemiconductor device of one embodiment of the present invention;

FIGS. 16A and 16B are cross-sectional views each illustrating asemiconductor device of one embodiment of the present invention;

FIGS. 17A1, 17A2, 17A3, 17B1, 17B2, and 17B3 are perspective views andcross-sectional views of semiconductor devices of embodiments of thepresent invention;

FIG. 18 is a configuration example of an RF tag of one embodiment of thepresent invention;

FIG. 19 is a block diagram of a semiconductor device of one embodimentof the present invention;

FIG. 20 is a circuit diagram illustrating a storage device of oneembodiment of the present invention;

FIGS. 21A, 21B, and 21C are a circuit diagram, a top view, and across-sectional view illustrating a semiconductor device of oneembodiment of the present invention;

FIGS. 22A and 22B are a circuit diagram and a cross-sectional viewillustrating a semiconductor device of one embodiment of the presentinvention;

FIGS. 23A to 23F each illustrate an example of an electronic applianceof one embodiment of the present invention;

FIGS. 24A to 24F illustrate application examples of an RF tag of oneembodiment of the present invention;

FIGS. 25A to 25C show cross-sectional STEM images in an example; and

FIGS. 26A to 26C show Id-Vg characteristics in an example.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments and examples will be described with referenceto the accompanying drawings. Note that the present invention is notlimited to the following description and it will be readily appreciatedby those skilled in the art that modes and details can be modified invarious ways without departing from the spirit and the scope of thepresent invention. Accordingly, the present invention should not beinterpreted as being limited to the content of the embodiments andexamples below.

Note that in structures of the present invention described below, thesame portions or portions having similar functions are denoted by thesame reference numerals in different drawings, and description thereofis not repeated in some cases. Furthermore, the same hatching pattern isapplied to portions having similar functions, and the portions are notparticularly denoted by reference numerals in some cases.

Note that functions of a “source” and a “drain” of a transistor aresometimes replaced with each other when a transistor of oppositepolarity is used or when the direction of current flow is changed incircuit operation, for example. Therefore, the terms “source” and“drain” can be used to denote the drain and the source, respectively, inthis specification.

Note that in this specification and the like, ordinal numbers such as“first” and “second” are used in order to avoid confusion amongcomponents and do not limit the components numerically.

Note that in each drawing described in this specification, the size, thelayer thickness, or the region of each component is exaggerated forclarity in some cases. Therefore, the scale is not necessarily limitedto that illustrated in the drawings.

A transistor is a kind of semiconductor elements and can achieveamplification of a current or a voltage, switching operation forcontrolling conduction or non-conduction, or the like. Examples oftransistors in this specification include an insulated-gate field effecttransistor (IGFET) and a thin film transistor (TFT).

Note that the terms “film” and “layer” can be interchanged with eachother depending on the case or circumstances. For example, the term“conductive layer” can be changed into the term “conductive film” insome cases. Also, the term “insulating film” can be changed into theterm “insulating layer” in some cases.

Unless otherwise specified, an off-state current in this specificationrefers to a drain current of a transistor in the off state (alsoreferred to as a non-conduction state and a cutoff state). Unlessotherwise specified, the off state of an n-channel transistor means thatthe voltage between its gate and source (Vgs: gate-source voltage) islower than the threshold voltage Vth, and the off state of a p-channeltransistor means that the gate-source voltage Vgs is higher than thethreshold voltage Vth. For example, the off-state current of ann-channel transistor sometimes refers to a drain current that flows whenthe gate-source voltage Vgs is lower than the threshold voltage Vth.

The off-state current of a transistor depends on the voltage Vgs in somecases. Thus, “the off-state current of a transistor is lower than orequal to I” may mean “there is a voltage Vgs with which the off-statecurrent of the transistor becomes lower than or equal to I”.Furthermore, “the off-state current of a transistor” means “theoff-state current in an off state at a predetermined voltage Vgs”, “theoff-state current in an off state at a voltage Vgs in a predeterminedrange”, “the off-state current in an off state at a voltage Vgs withwhich sufficiently reduced off-state current is obtained”, or the like.

As an example, the assumption is made of an n-channel transistor wherethe threshold voltage Vth is 0.5 V and the drain current is 1×10⁻⁹ A ata voltage Vgs of 0.5 V, 1×10⁻¹³ A at a voltage Vgs of 0.1 V, 1×10⁻¹⁹ Aat a voltage Vgs of −0.5 V, and 1×10⁻²² A at a voltage Vgs of −0.8 V.The drain current of the transistor is 1×10⁻¹⁹ A or lower at a voltageVgs of −0.5 V or at a voltage Vgs in the range of −0.8 V to −0.5 V;therefore, it may be said that the off-state current of the transistoris 1×10⁻¹⁹ A or lower. Since there is Vgs at which the drain current ofthe transistor is 1×10⁻²² A or lower, it may be said that the off-statecurrent of the transistor is 1×10⁻²² A or lower.

In this specification, the off-state current of a transistor with achannel width W is sometimes represented by a current value in relationto the channel width W or by a current value per given channel width(e.g., 1 μm). In the latter case, the off-state current may berepresented with a unit meaning current per length (e.g., A/μm).

The off-state current of a transistor depends on temperature in somecases. Unless otherwise specified, the off-state current in thisspecification may be an off-state current at room temperature, 60° C.,85° C., 95° C., or 125° C. Alternatively, the off-state current may bean off-state current at a temperature at which the reliability of asemiconductor device or the like including the transistor is ensured ora temperature at which the semiconductor device or the like includingthe transistor is used (e.g., temperature in the range of 5° C. to 35°C.). The case where the off-state current of the transistor is lowerthan or equal to I may indicate the existence of a value of Vgs at whichthe off-state current of the transistor is lower than or equal to I atroom temperature, 60° C., 85° C., 95° C., or 125° C., at a temperaturewhere the reliability of a semiconductor device or the like includingthe transistor is ensured, or at a temperature where the semiconductordevice or the like including the transistor is used (e.g., temperaturein the range of 5° C. to 35° C.).

The off-state current of a transistor depends on the voltage Vds betweenits drain and source in some cases. Unless otherwise specified, theoff-state current in this specification may be an off-state current atVds of 0.1 V, 0.8 V, 1 V, 1.2 V, 1.8 V, 2.5 V, 3 V, 3.3 V, 10 V, 12 V,16 V, or 20 V. Alternatively, the off-state current might be anoff-state current at Vds at which the reliability of a semiconductordevice or the like including the transistor is ensured or Vds used inthe semiconductor device or the like including the transistor. The casewhere the off-state current of the transistor is lower than or equal toI may indicate the existence of Vgs at which the off-state current ofthe transistor is lower than or equal to I at Vds of 0.1 V, 0.8 V, 1 V,1.2 V, 1.8 V, 2.5 V, 3 V, 3.3 V, 10 V, 12 V, 16 V, or 20 V, Vds wherethe reliability of a semiconductor device or the like including thetransistor is ensured or Vds used in the semiconductor device or thelike including the transistor.

In this specification, the term “leakage current” sometimes expressesthe same meaning as an off-state current.

In this specification, the off-state current sometimes refers to acurrent that flows between a source and a drain when a transistor isoff, for example.

In this specification, the term “parallel” indicates that the angleformed between two straight lines is greater than or equal to −10° andless than or equal to 10°, and accordingly also includes the case wherethe angle is greater than or equal to −5° and less than or equal to 5°.In addition, the term “substantially parallel” indicates that the angleformed between two straight lines is greater than or equal to −30° andless than or equal to 30°. The term “perpendicular” indicates that theangle formed between two straight lines is greater than or equal to 80°and less than or equal to 100°, and accordingly also includes the casewhere the angle is greater than or equal to 85° and less than or equalto 95°. In addition, the term “substantially perpendicular” indicatesthat the angle formed between two straight lines is greater than orequal to 60° and less than or equal to 120°.

In this specification, trigonal and rhombohedral crystal systems areincluded in a hexagonal crystal system.

Embodiment 1

In this embodiment, a method for manufacturing a wiring layer will bedescribed with reference to FIGS. 2A to 2C.

First, an insulator 302 is formed over an insulator 301, and aninsulator 303 is formed over the insulator 302 (see FIG. 2A). Then, agroove is formed in the insulator 303 so as to reach the insulator 302.Examples of the groove include a hole and an opening (see FIG. 2B). Informing the groove, wet etching may be employed; however, dry etching ispreferably employed in terms of microfabrication. The insulator 302 ispreferably an insulator that serves as an etching stopper film used informing the groove by etching the insulator 303. For example, in thecase where a silicon oxide film is used as the insulator 303 in whichthe groove is to be formed, the insulator 302 is preferably formed usinga silicon nitride film or an aluminum oxide film.

Although the insulator 302 is used in this embodiment, depending on theintended use, a conductor or semiconductor may be used instead of theinsulator 302.

After the formation of the groove, a conductor 310 is formed. Theconductor 310 preferably hardly allows oxygen to pass therethrough.Alternatively, the conductor 310 preferably allows less oxygen to passtherethrough than a conductor 311. For example, tantalum nitride,tungsten nitride, or titanium nitride can be used. The conductor 310 canbe formed by a sputtering method, a CVD method, an ALD method, or thelike. Then, the conductor 311 is formed over the conductor 310 (see FIG.2C). The conductor 311 preferably has low resistance. For example,tantalum, tungsten, titanium, molybdenum, aluminum, copper, or amolybdenum-tungsten alloy can be used. The conductor 311 can be formedby a method similar to that for the conductor 310.

Next, chemical mechanical polishing (CMP) is performed to removeportions of the conductors 310 and 311 that are located over theinsulator 303. Consequently, the conductors 310 and 311 remain only inthe groove, whereby a wiring layer illustrated in FIG. 1A can be formed.

An end of the conductor 310 at an end of the groove is at a level lowerthan or equal to that of the open side of the groove. The top surface ofthe conductor 311 is at a level lower than or equal to that of the endof the conductor 310. These are due to a difference in polishing ratebetween the conductors 310 and 311. That is, in this embodiment, thepolishing rate for the conductor 311 is higher than that for theconductor 310.

When a conductor is used as a wiring layer or an electrode layer, it isnecessary to prevent oxidation of the conductor due to oxygen containedin an oxide film in the vicinity of the conductor, such as a siliconoxide film. Oxidation of the conductor might increase the resistance,degrading the function of the wiring layer or the electrode layer.Moreover, oxidation of the conductor might increase its volume and thuscause separation or cracking of the conductor itself or a film in thevicinity of the conductor. Therefore, it is important to prevent theoxidation.

According to one embodiment of the present invention, the bottom surfaceand side surfaces of the conductor 311 are surrounded by the conductor310 and thus the conductor 311 is not in direct contact with the oxidefilm as illustrated in FIG. 1A. This can suppress entry of oxygen intothe conductor 311, so that a significant problem can be prevented; forexample, the conductor 311 can be prevented from separated because ofincrease in the volume caused by oxidation of the conductor 311.

Although a substrate is not illustrated in this embodiment, a singlematerial semiconductor substrate of silicon, germanium, or the like or acompound semiconductor substrate of silicon carbide, silicon germanium,gallium arsenide, indium phosphide, zinc oxide, gallium oxide, or thelike can be used, for example. Alternatively, an insulator substratemade of quartz, glass, or the like may be used and the wiring layerformed in this embodiment can be provided above the insulator substrate.Alternatively, any of the above substrates provided with elements suchas a transistor and a capacitor may be used.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 2

In this embodiment, a method for manufacturing such a wiring layer as isillustrated in FIG. 1B will be described.

In Embodiment 1, CMP is employed and the bottom surface and sidesurfaces of the conductor 311 are surrounded by the conductor, while inthis embodiment, a conductor 312 is further formed over the conductor311. The conductor 312 preferably hardly allows oxygen to passtherethrough like the conductor 310. Alternatively, the conductor 312preferably allows less oxygen to pass therethrough than the conductor311. The conductor 312 can be formed using tantalum nitride, tungstennitride, or titanium nitride, for example. Alternatively, the conductor312 may be formed using the same conductor as the conductor 310.

Then, the conductor 312 is subjected to CMP until the insulator 303 isreached. Thus, the conductors 310, 311, and 312 are embedded in a grooveto form a wiring layer as in FIG. 1B.

The wiring layer illustrated in FIG. 1B has a structure in which thebottom surface, side surfaces, and top surface of the conductor 311 aresurrounded by the conductors 310 and 312, so that oxidation of theconductor 311 can be prevented. Furthermore, this embodiment ispreferred to Embodiment 1 because CMP is performed one more time tofurther planarize the top surface of the wiring layer, thereby improvingcoverage with a film over the wiring layer.

Although a substrate is not illustrated in this embodiment as inEmbodiment 1, a single material semiconductor substrate of silicon,germanium, or the like or a compound semiconductor substrate of siliconcarbide, silicon germanium, gallium arsenide, indium phosphide, zincoxide, gallium oxide, or the like can be used, for example.Alternatively, an insulator substrate made of quartz, glass, or the likemay be used and the wiring layer formed in this embodiment can beprovided above the insulator substrate. Alternatively, any of the abovesubstrates provided with elements such as a transistor and a capacitormay be used.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 3

In this embodiment, an example in which the wiring layer described inEmbodiment 1 is used for a transistor will be described. FIG. 3A is atop view of a transistor of one embodiment of the present invention.FIG. 3B is a cross-sectional view of the transistor in the channellength direction that is taken along the dashed-dotted line X1-X2 inFIG. 3A. FIG. 3C is a cross-sectional view of the transistor in thechannel width direction that is taken along the dashed-dotted line Y1-Y2in FIG. 3A.

As the semiconductor substrate 300, a single material semiconductorsubstrate of silicon, germanium, or the like or a compound semiconductorsubstrate of silicon carbide, silicon germanium, gallium arsenide,indium phosphide, zinc oxide, gallium oxide, or the like can be used,for example. Alternatively, an insulator substrate made of quartz,glass, or the like may be used.

The insulator 301 is formed over the substrate 300. The insulator 301can be formed using a silicon oxide film, a silicon oxynitride film, asilicon nitride oxide film, a silicon nitride film, an aluminum oxidefilm, an aluminum nitride film, a hafnium oxide film, or the like by athermal oxidation method, a CVD method, a sputtering method, an ALDmethod, a plasma oxidation method, a plasma nitridation method, or thelike.

Next, the insulator 302 is formed over the insulator 301. Then, a wiringlayer having a structure in which the bottom surface and side surfacesof the conductor 311 are surrounded by the conductor 310 is formed as inEmbodiment 1. The wiring layer composed of the conductors 310 and 311 isused as a gate electrode in the transistor.

An insulator 304 is formed over the conductor 311 and the insulator 303.The insulator 304 can be formed using a film and a film formation methodthat are similar to those used to form the insulator 301 describedabove. An insulator that hardly allows oxygen to pass therethrough ispreferably used; for example, an aluminum oxide film or an aluminumnitride film can be used. Consequently, the bottom surface and sidesurfaces of the conductor 311 are surrounded by the conductor 310, andthe top surface of the conductor 311 is covered with the insulator 304.This can suppress oxidation of the conductor 311, so that a significantproblem can be prevented; for example, the conductor 311 or the film inthe vicinity of the conductor 311 can be prevented from being lifted orseparated because of increase in the volume of the conductor 311 causedby oxidation thereof.

An insulator 305 is formed over the insulator 304. Note that theinsulator 305 is preferably an insulator containing excess oxygen.

The insulator containing excess oxygen means an insulator from whichoxygen is released by heat treatment, for example. A silicon oxide filmcontaining excess oxygen means a silicon oxide film which can releaseoxygen by heat treatment or the like, for example. Therefore, theinsulator 305 is an insulator in which oxygen can move. In other words,the insulator 305 may be an insulator having oxygen permeability. Forexample, the insulator 305 may be an insulator having higher oxygenpermeability than the semiconductor 320.

The insulator containing excess oxygen has a function of reducing oxygenvacancies in the semiconductor 320 in some cases. Such oxygen vacanciesserve as hole traps or the like. In addition, hydrogen comes into thesite of such an oxygen vacancy and forms an electron serving as acarrier. Therefore, by reducing the oxygen vacancies in the oxidesemiconductor 320, the transistor can have stable electricalcharacteristics.

Here, an insulator from which oxygen is released by heat treatment mayrelease oxygen whose amount is higher than or equal to 1×10¹⁸ atoms/cm³,higher than or equal to 1×10¹⁹ atoms/cm³, or higher than or equal to1×10²⁰ atoms/cm³ (converted into the number of oxygen atoms) in TDSanalysis in the range of a surface temperature of 100° C. to 700° C. or100° C. to 500° C.

Here, the method for measuring the amount of released oxygen using TDSanalysis will be described below.

The total amount of gas released from a measurement sample in TDSanalysis is proportional to the integral value of the ion intensity ofthe released gas. Then, comparison with a reference sample is made,whereby the total amount of released gas can be calculated.

For example, the number of oxygen molecules (N_(O2)) released from ameasurement sample can be calculated according to the following formulausing the TDS results of a silicon substrate containing hydrogen at apredetermined density, which is a reference sample, and the TDS resultsof the measurement sample. Here, all gases having a mass-to-charge ratioof 32 which are obtained in the TDS analysis are assumed to originatefrom an oxygen molecule. Note that CH₃OH, which is a gas having themass-to-charge ratio of 32, is not taken into consideration because itis unlikely to be present. Furthermore, an oxygen molecule including anoxygen atom having a mass number of 17 or 18 which is an isotope of anoxygen atom is not taken into consideration either because theproportion of such a molecule in the natural world is negligible.

N_(O2)=N_(H2)/S_(H2)×S_(O2)×α

The value N_(H2) is obtained by conversion of the amount of hydrogenmolecules desorbed from the standard sample into densities. The valueS_(H2) is the integral value of ion intensity when the standard sampleis subjected to the TDS analysis. Here, the reference value of thestandard sample is set to N_(H2)/S_(H2). S_(O2) is the integral value ofion intensity when the measurement sample is analyzed by TDS. The valueα is a coefficient affecting the ion intensity in the TDS analysis.Refer to Japanese Published Patent Application No. H6-275697 for detailsof the above formula. The amount of released oxygen was measured with athermal desorption spectroscopy apparatus produced by ESCO Ltd.,EMD-WA1000S/W, using a silicon substrate containing hydrogen atoms at1×10¹⁶ atoms/cm² as the reference sample.

Furthermore, in the TDS analysis, oxygen is partly detected as an oxygenatom. The ratio between oxygen molecules and oxygen atoms can becalculated from the ionization rate of the oxygen molecules. Note thatsince the above α includes the ionization rate of the oxygen molecules,the amount of the released oxygen atoms can also be estimated throughthe measurement of the amount of the released oxygen molecules.

Note that N_(O2) is the amount of the released oxygen molecules. Theamount of released oxygen in the case of being converted into oxygenatoms is twice the amount of the released oxygen molecules.

Furthermore, the insulator from which oxygen is released by heattreatment may contain a peroxide radical. Specifically, the spin densityattributed to the peroxide radical is greater than or equal to 5×10¹⁷spins/cm³. Note that the insulator containing a peroxide radical mayhave an asymmetric signal with a g factor of approximately 2.01 in ESR.

The insulator containing excess oxygen may be formed using oxygen-excesssilicon oxide (SiO_(X) (X>2)). In the oxygen-excess silicon oxide(SiO_(X) (X>2)), the number of oxygen atoms per unit volume is more thantwice the number of silicon atoms per unit volume. The number of siliconatoms and the number of oxygen atoms per unit volume are measured byRutherford backscattering spectrometry (RBS).

The insulator 305 has a function as a gate insulator of the transistor.The insulator 305 can be formed using a film and a film formation methodthat are similar to those used to form the insulator 301 describedabove. Although the insulator 305 has a single-layer structure in FIGS.3B and 3C, the insulator 305 may be a multilayer film. For example, athree-layer structure in which a silicon oxide film, a hafnium oxidefilm, and a silicon oxide film are stacked in this order may beemployed. The hafnium oxide film may be used as an electron trap layerto control the threshold voltage of the transistor. Alternatively, alayered structure including more than three layers may be employed; acombination of any of the films for the insulator 301 that are listedabove can be used.

A semiconductor 320 is formed over the insulator 305, a conductor isformed over the semiconductor 320, and then, a portion of the conductorthat overlaps with a channel formation region is etched to form thechannel formation region. After that, the conductor and thesemiconductor 320 are etched to form a layered island-like regionincluding source and drain electrodes (a pair of electrodes) 312 a and312 b and the semiconductor 320.

Alternatively, the following procedure may be employed: before formationof the channel formation region, the conductor and the semiconductor 320are etched to form a layered island-like region including the conductorand the semiconductor 320, and then, a portion of the conductor thatoverlaps with a channel formation region is etched to form the channelformation region and the source and drain electrodes 312 a and 312 b.

The source and drain electrodes 312 a and 312 b can be formed usingtantalum, tungsten, titanium, molybdenum, aluminum, copper, amolybdenum-tungsten alloy, tungsten nitride, titanium nitride, ortantalum nitride, for example. Alternatively, a multilayer structure maybe employed. Examples of the film formation method include a sputteringmethod, a CVD method, and an ALD method.

Next, an insulator 306 is formed so as to cover the source and drainelectrodes 312 a and 312 b and the channel formation region. Theinsulator 306 functions as a second gate insulator of the transistor.The description of the insulator 305 can be referred to for theinsulator 306.

By placing a semiconductor over and under the semiconductor 320, theelectrical characteristics of the transistor can be increased in somecases. The semiconductor 320 and semiconductors placed over and underthe semiconductor 320 will be described in detail below with referenceto FIGS. 4A and 4B.

FIG. 4A is an enlarged cross-sectional view illustrating thesemiconductor 320 and its vicinity of the transistor illustrated in FIG.3B in the channel length direction. FIG. 4B is an enlargedcross-sectional view illustrating the semiconductor 320 and its vicinityof the transistor illustrated in FIG. 3C in the channel width direction.

In the transistor structure illustrated in FIGS. 4A and 4B, asemiconductor 320 a is placed between the insulator 305 and thesemiconductor 320. In addition, a semiconductor 320 c is placed betweenthe insulator 306 and the source and drain electrodes 312 a and 312 b.

The semiconductor 320 is an oxide semiconductor containing indium, forexample. The oxide semiconductor 320 can have high carrier mobility(electron mobility) by containing indium, for example. The semiconductor320 preferably contains an element M. The element M is preferablyaluminum, gallium, yttrium, tin, or the like. Other elements which canbe used as the element M are boron, silicon, titanium, iron, nickel,germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium,tantalum, tungsten, and the like. Note that two or more of the aboveelements may be used in combination as the element M. The element M isan element having high bonding energy with oxygen, for example. Theelement M is an element whose bonding energy with oxygen is higher thanthat of indium, for example. The element M is an element that canincrease the energy gap of the oxide semiconductor, for example.Furthermore, the semiconductor 320 preferably contains zinc. When theoxide semiconductor contains zinc, the oxide semiconductor is easilycrystallized, in some cases.

Note that the semiconductor 320 is not limited to the oxidesemiconductor containing indium. The semiconductor 320 may be, forexample, an oxide semiconductor which does not contain indium andcontains zinc, an oxide semiconductor which does not contain indium andcontains gallium, or an oxide semiconductor which does not containindium and contains tin, e.g., a zinc tin oxide or a gallium tin oxide.

For the semiconductor 320, an oxide with a wide energy gap may be used,for example. For example, the energy gap of the semiconductor 320 isgreater than or equal to 2.5 eV and less than or equal to 4.2 eV,preferably greater than or equal to 2.8 eV and less than or equal to 3.8eV, more preferably greater than or equal to 3 eV and less than or equalto 3.5 eV.

For example, the semiconductor 320 a and the semiconductor 320 c areoxide semiconductors including one or more elements, or two or moreelements other than oxygen included in the semiconductor 320. Since thesemiconductor 320 a and the semiconductor 320 c each include one or moreelements, or two or more elements other than oxygen included in thesemiconductor 320, a defect state is less likely to be formed at theinterface between the semiconductor 320 a and the semiconductor 320 andthe interface between the semiconductor 320 and the semiconductor 320 c.

The semiconductor 320 a, the semiconductor 320, and the semiconductor320 c preferably include at least indium. In the case of using anIn-M-Zn oxide as the semiconductor 320 a, when the summation of In and Mis assumed to be 100 atomic %, the proportions of In and M arepreferably set to be less than 50 atomic % and greater than 50 atomic %,respectively, more preferably less than 25 atomic % and greater than 75atomic %, respectively. In the case of using an In-M-Zn oxide as thesemiconductor 320, when the summation of In and M is assumed to be 100atomic %, the proportions of In and M are preferably set to be greaterthan 25 atomic % and less than 75 atomic %, respectively, morepreferably greater than 34 atomic % and less than 66 atomic %,respectively. In the case of using an In-M-Zn oxide as the semiconductor320 c, when the summation of In and M is assumed to be 100 atomic %, theproportions of In and M are preferably set to be less than 50 atomic %and greater than 50 atomic %, respectively, more preferably less than 25atomic % and greater than 75 atomic %, respectively. Note that thesemiconductor 320 c may be an oxide that is of the same type as thesemiconductor 320 a. Note that the semiconductor 320 a and/or thesemiconductor 320 c do/does not necessarily contain indium in somecases. For example, the semiconductor 320 a and/or the semiconductor 320c may be gallium oxide. Note that the atomic ratios of the elementsincluded in the semiconductor 320 a, the semiconductor 320, and thesemiconductor 320 c are not necessarily simple ratios of integers.

As the semiconductor 320, an oxide having an electron affinity higherthan those of the semiconductors 320 a and 320 c is used. For example,as the semiconductor 320, an oxide having an electron affinity higherthan those of the semiconductors 320 a and 320 c by 0.07 eV or higherand 1.3 eV or lower, preferably 0.1 eV or higher and 0.7 eV or lower,more preferably 0.15 eV or higher and 0.4 eV or lower is used. Note thatthe electron affinity refers to an energy difference between the vacuumlevel and the conduction band minimum.

An indium gallium oxide has a small electron affinity and an excellentoxygen-blocking property. Therefore, the semiconductor 320 c preferablyincludes an indium gallium oxide. The gallium atomic ratio [Ga/(In+Ga)]is, for example, higher than or equal to 70%, preferably higher than orequal to 80%, more preferably higher than or equal to 90%.

In that case, when a gate voltage is applied, a channel is formed in thesemiconductor 320 having the highest electron affinity among thesemiconductors 320 a, 320, and 320 c.

Here, in some cases, there is a mixed region of the semiconductor 320 aand the semiconductor 320 between the semiconductor 320 a and thesemiconductor 320. Furthermore, in some cases, there is a mixed regionof the semiconductor 320 and the semiconductor 320 c between thesemiconductor 320 and the semiconductor 320 c. The mixed region has alow density of defect states. For that reason, the stack including thesemiconductor 320 a, the semiconductor 320, and the semiconductor 320 chas a band structure where energy is changed continuously at eachinterface and in the vicinity of the interface (continuous junction)(see FIG. 4C). Note that boundaries of the semiconductor 320 a, thesemiconductor 320, and the semiconductor 320 c are not clear in somecases.

At this time, electrons move mainly in the semiconductor 320, not in thesemiconductor 320 a and the semiconductor 320 c. As described above,when the density of defect states at the interface between thesemiconductor 320 a and the semiconductor 320 and the density of defectstates at the interface between the semiconductor 320 and thesemiconductor 320 c are decreased, electron movement in thesemiconductor 320 is less likely to be inhibited and the on-sate currentof the transistor can be increased.

As factors of inhibiting electron movement are decreased, the on-statecurrent of the transistor can be increased. For example, in the casewhere there is no factor of inhibiting electron movement, electrons areassumed to be efficiently moved. Electron movement is inhibited, forexample, in the case where physical unevenness of the channel formationregion is large.

To increase the on-state current of the transistor, for example, rootmean square (RMS) roughness with a measurement area of 1 μm×1 μm of thetop surface or the bottom surface (a formation surface; here, thesemiconductor 320 a) of the semiconductor 320 is less than 1 nm,preferably less than 0.6 nm, more preferably less than 0.5 nm, stillmore preferably less than 0.4 nm. The average surface roughness (alsoreferred to as Ra) with the measurement area of 1 μm×1 μm is less than 1nm, preferably less than 0.6 nm, more preferably less than 0.5 nm, stillmore preferably less than 0.4 nm. The maximum difference (P−V) with themeasurement area of 1 μm×1 μm is less than 10 nm, preferably less than 9nm, more preferably less than 8 nm, still more preferably less than 7nm. RMS roughness, Ra, and P−V can be measured using, for example, ascanning probe microscope SPA-500 manufactured by SII Nano TechnologyInc.

The electron movement is also inhibited, for example, in the case wherethe density of defect states is high in a region where a channel isformed.

For example, in the case where the semiconductor 320 contains oxygenvacancies (also denoted by V_(O)), donor levels are formed by entry ofhydrogen into sites of oxygen vacancies in some cases. A state in whichhydrogen enters sites of oxygen vacancies is denoted by V_(O)H in thefollowing description in some cases. V_(O)H is a factor of decreasingthe on-state current of the transistor because V_(O)H scatterselectrons. Note that sites of oxygen vacancies become more stable byentry of oxygen than by entry of hydrogen. Thus, by decreasing oxygenvacancies in the semiconductor 320, the on-state current of thetransistor can be increased in some cases.

Furthermore, in the case where the density of defect states is high in aregion where a channel is formed, the electrical characteristics of thetransistor vary in some cases. For example, in the case where the defectstates serve as carrier generation sources, the threshold voltage of thetransistor might vary.

To decrease oxygen vacancies in the semiconductor 320, for example,there is a method in which excess oxygen in the insulator 305 is movedto the semiconductor 320 through the semiconductor 320 a. In this case,the semiconductor 320 a is preferably a layer having an oxygenpermeability (a layer through which oxygen passes).

Moreover, the thickness of the semiconductor 320 c is preferably assmall as possible to increase the on-state current of the transistor.For example, the semiconductor 320 c is formed to include a regionhaving a thickness of less than 10 nm, preferably less than or equal to5 nm, more preferably less than or equal to 3 nm. Meanwhile, thesemiconductor 320 c has a function of blocking entry of elements otherthan oxygen (such as hydrogen and silicon) included in the adjacentinsulator into the semiconductor 320 where a channel is formed. For thisreason, it is preferable that the semiconductor 320 c have a certainthickness. For example, the semiconductor 320 c is formed to include aregion having a thickness of greater than or equal to 0.3 nm, preferablygreater than or equal to 1 nm, more preferably greater than or equal to2 nm. The semiconductor 320 c preferably has an oxygen blocking propertyto suppress outward diffusion of oxygen released from the insulator 305and the like.

To improve reliability, preferably, the thickness of the semiconductor320 a is large and the thickness of the semiconductor 320 c is small.For example, the semiconductor 320 a includes a region with a thicknessof, for example, greater than or equal to 10 nm, preferably greater thanor equal to 20 nm, more preferably greater than or equal to 40 nm, stillmore preferably greater than or equal to 60 nm. When the thickness ofthe semiconductor 320 a is made large, a distance from an interfacebetween the adjacent insulator and the semiconductor 320 a to thesemiconductor 320 in which a channel is formed can be large. Since theproductivity of the semiconductor device might be decreased, thesemiconductor 320 a has a region with a thickness of, for example, lessthan or equal to 200 nm, preferably less than or equal to 120 nm, morepreferably less than or equal to 80 nm.

For example, a region with a silicon concentration measured by secondaryion mass spectrometry (SIMS) of higher than or equal to 1×10¹⁶ atoms/cm³and lower than or equal to 1×10¹⁹ atoms/cm³, preferably higher than orequal to 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁸ atoms/cm³,more preferably higher than or equal to 1×10¹⁶ atoms/cm³ and lower thanor equal to 2×10¹⁸ atoms/cm³ is provided between the semiconductor 320and the semiconductor 320 a. A region with a silicon concentrationmeasured by SIMS of higher than or equal to 1×10¹⁶ atoms/cm³ and lowerthan or equal to 1×10¹⁹ atoms/cm³, preferably higher than or equal to1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁸ atoms/cm³, morepreferably higher than or equal to 1×10¹⁶ atoms/cm³ and lower than orequal to 2×10¹⁸ atoms/cm³ is provided between the semiconductor 320 andthe semiconductor 320 c.

It is preferable to reduce the hydrogen concentration in thesemiconductor 320 a and the semiconductor 320 c in order to reduce thehydrogen concentration in the semiconductor 320. The semiconductor 320 aand the semiconductor 320 c each include a region with a hydrogenconcentration measured by SIMS of higher than or equal to 1×10¹⁶atoms/cm³ and lower than or equal to 2×10²⁰ atoms/cm³, preferably higherthan or equal to 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁹atoms/cm³, more preferably higher than or equal to 1×10¹⁶ atoms/cm³ andlower than or equal to 1×10¹⁹ atoms/cm³, or still more preferably higherthan or equal to 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁸atoms/cm³. It is preferable to reduce the nitrogen concentration in thesemiconductor 320 a and the semiconductor 320 c in order to reduce thenitrogen concentration in the semiconductor 320. The semiconductor 320 aand the semiconductor 320 c each include a region with a nitrogenconcentration measured by SIMS of higher than or equal to 1×10¹⁵atoms/cm³ and lower than or equal to 5×10¹⁹ atoms/cm³, preferably higherthan or equal to 1×10¹⁵ atoms/cm³ and lower than or equal to 5×10¹⁸atoms/cm³, more preferably higher than or equal to 1×10¹⁵ atoms/cm³ andlower than or equal to 1×10¹⁸ atoms/cm³, or still more preferably higherthan or equal to 1×10¹⁵ atoms/cm³ and lower than or equal to 5×10¹⁷atoms/cm³.

The above three-layer structure is an example. For example, a two-layerstructure without the semiconductor 320 a or the semiconductor 320 c maybe employed. A four-layer structure in which any one of thesemiconductors described as examples of the semiconductor 320 a, thesemiconductor 320, and the semiconductor 320 c is provided under or overthe semiconductor 320 a or under or over the semiconductor 320 c may beemployed. An n-layer structure (n is an integer of 5 or more) in whichany one of the semiconductors described as examples of the semiconductor320 a, the semiconductor 320, and the semiconductor 320 c is provided attwo or more of the following positions: over the semiconductor 320 a,under the semiconductor 320 a, over the semiconductor 320 c, and underthe semiconductor 320 c.

The structure of an oxide semiconductor will be described below.

Oxide semiconductors are classified into a single crystal oxidesemiconductor and a non-single-crystal oxide semiconductor. Examples ofa non-single-crystal oxide semiconductor include a c-axis alignedcrystalline oxide semiconductor (CAAC-OS), a polycrystalline oxidesemiconductor, a microcrystalline oxide semiconductor, and an amorphousoxide semiconductor.

From another perspective, oxide semiconductors are classified into anamorphous oxide semiconductor and a crystalline oxide semiconductor.Examples of a crystalline oxide semiconductor include a single crystaloxide semiconductor, a CAAC-OS, a polycrystalline oxide semiconductor,and a microcrystalline oxide semiconductor.

First, a CAAC-OS will be described. Note that a CAAC-OS can be referredto as an oxide semiconductor including c-axis aligned nanocrystals(CANC).

A CAAC-OS is an oxide semiconductor having a plurality of c-axis alignedcrystal parts (also referred to as pellets).

In a combined analysis image (also referred to as a high-resolution TEMimage) of a bright-field image and a diffraction pattern of a CAAC-OS,which is obtained using a transmission electron microscope (TEM), aplurality of pellets can be observed. However, in the high-resolutionTEM image, a boundary between pellets, that is, a grain boundary is notclearly observed. Thus, in the CAAC-OS, a reduction in electron mobilitydue to the grain boundary is less likely to occur.

The CAAC-OS observed with a TEM will be described below. FIG. 5A shows ahigh-resolution TEM image of a cross section of the CAAC-OS observedfrom the direction substantially parallel to the sample surface. Thehigh-resolution TEM image is obtained with a spherical aberrationcorrector function. The high-resolution TEM image obtained with aspherical aberration corrector function is particularly referred to as aCs-corrected high-resolution TEM image. The Cs-corrected high-resolutionTEM image can be obtained with, for example, an atomic resolutionanalytical electron microscope JEM-ARM200F manufactured by JEOL Ltd.

FIG. 5B is an enlarged Cs-corrected high-resolution TEM image of aregion (1) in FIG. 5A. FIG. 5B shows that metal atoms are arranged in alayered manner in a pellet. Each metal atom layer has a configurationreflecting unevenness of a surface over which the CAAC-OS is formed(hereinafter, the surface is referred to as a formation surface) or atop surface of the CAAC-OS, and is arranged parallel to the formationsurface or the top surface of the CAAC-OS.

As shown in FIG. 5B, the CAAC-OS has a characteristic atomicarrangement. The characteristic atomic arrangement is denoted by anauxiliary line in FIG. 5C. FIGS. 5B and 5C prove that the size of apellet is approximately 1 nm to 3 nm, and the size of a space caused bythe tilt of the pellets is approximately 0.8 nm. Therefore, the pelletcan also be referred to as a nanocrystal (nc).

Here, according to the Cs-corrected high-resolution TEM images, theschematic arrangement of pellets 5100 of a CAAC-OS over a substrate 5120is illustrated by such a structure in which bricks or blocks are stacked(see FIG. 5D). The part in which the pellets are tilted as observed inFIG. 5C corresponds to a region 5161 illustrated in FIG. 5D.

FIG. 6A shows a Cs-corrected high-resolution TEM image of a plane of theCAAC-OS film observed from the direction substantially perpendicular tothe sample surface. FIGS. 6B, 6C, and 6D are enlarged Cs-correctedhigh-resolution TEM images of regions (1), (2), and (3) in FIG. 6A,respectively. FIGS. 6B, 6C, and 6D indicate that metal atoms arearranged in a triangular, quadrangular, or hexagonal configuration in apellet. However, there is no regularity of arrangement of metal atomsbetween different pellets.

Next, a CAAC-OS analyzed by X-ray diffraction (XRD) will be described.For example, when the structure of a CAAC-OS including an InGaZnO₄crystal is analyzed by an out-of-plane method, a peak appears at adiffraction angle (2θ) of around 31° as shown in FIG. 7A. This peak isderived from the (009) plane of the InGaZnO₄ crystal, which indicatesthat crystals in the CAAC-OS have c-axis alignment, and that the c-axesare aligned in the direction substantially perpendicular to theformation surface or the top surface of the CAAC-OS.

Note that in structural analysis of the CAAC-OS by an out-of-planemethod, another peak may appear when 2θ is around 36°, in addition tothe peak at 2θ of around 31°. The peak at 2θ of around 36° indicatesthat a crystal having no c-axis alignment is included in part of theCAAC-OS. In a preferable CAAC-OS whose structure is analyzed by anout-of-plane method, a peak appears when 2θ is around 31° and no peakappears when 2 is around 36°.

On the other hand, in structural analysis of the CAAC-OS by an in-planemethod in which an X-ray is incident on a sample in the directionsubstantially perpendicular to the c-axis, a peak appears when 2θ isaround 56°. This peak is attributed to the (110) plane of the InGaZnO₄crystal. In the case of the CAAC-OS, when analysis (ϕ scan) is performedwith 2θ fixed at around 56° and with the sample rotated using a normalvector of the sample surface as an axis (ϕ axis), as shown in FIG. 7B, apeak is not clearly observed. In contrast, in the case of a singlecrystal oxide semiconductor of InGaZnO₄, when ϕ scan is performed with2θ fixed at around 56°, as shown in FIG. 7C, six peaks which are derivedfrom crystal planes equivalent to the (110) plane are observed.Accordingly, the structural analysis using XRD shows that the directionsof a-axes and b-axes are irregularly oriented in the CAAC-OS.

Next, a CAAC-OS analyzed by electron diffraction will be described. Forexample, when an electron beam with a probe diameter of 300 nm isincident on a CAAC-OS including an InGaZnO₄ crystal in the directionparallel to the sample surface, such a diffraction pattern (alsoreferred to as a selected-area transmission electron diffractionpattern) as is shown in FIG. 8A might be obtained. In this diffractionpattern, spots derived from the (009) plane of an InGaZnO₄ crystal areincluded. Thus, the electron diffraction also indicates that pelletsincluded in the CAAC-OS have c-axis alignment and that the c-axes arealigned in the direction substantially perpendicular to the formationsurface or the top surface of the CAAC-OS. Meanwhile, FIG. 8B shows adiffraction pattern obtained in such a manner that an electron beam witha probe diameter of 300 nm is incident on the same sample in thedirection perpendicular to the sample surface. As shown in FIG. 8B, aring-like diffraction pattern is observed. Thus, the electrondiffraction also indicates that the a-axes and b-axes of the pelletsincluded in the CAAC-OS do not have regular alignment. The first ring inFIG. 8B is considered to be derived from the (010) plane, the (100)plane, and the like of the InGaZnO₄ crystal. The second ring in FIG. 8Bis considered to be derived from the (110) plane and the like.

Moreover, the CAAC-OS is an oxide semiconductor having a low density ofdefect states. Defects in the oxide semiconductor are, for example, adefect due to an impurity and oxygen vacancies. Therefore, the CAAC-OScan be regarded as an oxide semiconductor with a low impurityconcentration, or an oxide semiconductor having a small number of oxygenvacancies.

The impurity contained in the oxide semiconductor might serve as acarrier trap or serve as a carrier generation source. Furthermore,oxygen vacancies in the oxide semiconductor might serve as carrier trapsor serve as carrier generation sources when hydrogen is capturedtherein.

Note that the impurity means an element other than the main componentsof the oxide semiconductor, such as hydrogen, carbon, silicon, or atransition metal element. For example, an element (specifically, siliconor the like) having higher strength of bonding to oxygen than a metalelement included in an oxide semiconductor extracts oxygen from theoxide semiconductor, which results in disorder of the atomic arrangementand reduced crystallinity of the oxide semiconductor. A heavy metal suchas iron or nickel, argon, carbon dioxide, or the like has a large atomicradius (or molecular radius), and thus disturbs the atomic arrangementof the oxide semiconductor and decreases crystallinity.

An oxide semiconductor having a low density of defect states (a smallnumber of oxygen vacancies) can have a low carrier density. Such anoxide semiconductor is referred to as a highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor. A CAAC-OShas a low impurity concentration and a low density of defect states.That is, a CAAC-OS is likely to be highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor. Thus, atransistor including a CAAC-OS rarely has negative threshold voltage (israrely normally on). The highly purified intrinsic or substantiallyhighly purified intrinsic oxide semiconductor has few carrier traps.Electric charge trapped by the carrier traps in the oxide semiconductortakes a long time to be released. The trapped electric charge may behavelike a fixed electric charge. Thus, the transistor which includes theoxide semiconductor having a high impurity concentration and a highdensity of defect states might have unstable electrical characteristics.However, a transistor including a CAAC-OS has small variations inelectrical characteristics and high reliability.

Since the CAAC-OS has a low density of defect states, carriers generatedby light irradiation or the like are less likely to be trapped in defectstates. Therefore, in a transistor using the CAAC-OS, a change inelectrical characteristics due to irradiation with visible light orultraviolet light is small.

Next, a microcrystalline oxide semiconductor will be described.

A microcrystalline oxide semiconductor has a region in which a crystalpart is observed and a region in which a crystal part is not clearlyobserved in a high-resolution TEM image. In most cases, the size of acrystal part included in the microcrystalline oxide semiconductor isgreater than or equal to 1 nm and less than or equal to 100 nm, orgreater than or equal to 1 nm and less than or equal to 10 nm. An oxidesemiconductor including a nanocrystal that is a microcrystal with a sizegreater than or equal to 1 nm and less than or equal to 10 nm, or a sizegreater than or equal to 1 nm and less than or equal to 3 nm isspecifically referred to as a nanocrystalline oxide semiconductor(nc-OS). In a high-resolution TEM image of the nc-OS, for example, agrain boundary is not clearly observed in some cases. Note that there isa possibility that the origin of the nanocrystal is the same as that ofa pellet in a CAAC-OS. Therefore, a crystal part of the nc-OS may bereferred to as a pellet in the following description.

In the nc-OS, a microscopic region (for example, a region with a sizegreater than or equal to 1 nm and less than or equal to 10 nm, inparticular, a region with a size greater than or equal to 1 nm and lessthan or equal to 3 nm) has a periodic atomic arrangement. There is noregularity of crystal orientation between different pellets in thenc-OS. Thus, the orientation of the whole film is not ordered.Accordingly, the nc-OS cannot be distinguished from an amorphous oxidesemiconductor, depending on an analysis method. For example, when thenc-OS is subjected to structural analysis by an out-of-plane method withan XRD apparatus using an X-ray having a diameter larger than the sizeof a pellet, a peak which shows a crystal plane does not appear.Furthermore, a diffraction pattern like a halo pattern is observed whenthe nc-OS is subjected to electron diffraction using an electron beamwith a probe diameter (e.g., 50 nm or larger) that is larger than thesize of a pellet (the electron diffraction is also referred to asselected-area electron diffraction). Meanwhile, spots appear in ananobeam electron diffraction pattern of the nc-OS when an electron beamhaving a probe diameter close to or smaller than the size of a pellet isapplied. Moreover, in a nanobeam electron diffraction pattern of thenc-OS, regions with high luminance in a circular (ring) pattern areshown in some cases. Furthermore, a plurality of spots is shown in aring-like region in some cases.

Since there is no regularity of crystal orientation between the pellets(nanocrystals) as mentioned above, the nc-OS can also be referred to asan oxide semiconductor including random aligned nanocrystals (RANC) oran oxide semiconductor including non-aligned nanocrystals (NANC).

The nc-OS is an oxide semiconductor that has high regularity as comparedwith an amorphous oxide semiconductor. Therefore, the nc-OS is likely tohave a lower density of defect states than an amorphous oxidesemiconductor. Note that there is no regularity of crystal orientationbetween different pellets in the nc-OS. Therefore, the nc-OS has ahigher density of defect states than the CAAC-OS.

Next, an amorphous oxide semiconductor will be described.

The amorphous oxide semiconductor is an oxide semiconductor havingdisordered atomic arrangement and no crystal part and exemplified by anoxide semiconductor that exists in an amorphous state, such as quartz.

In a high-resolution TEM image of the amorphous oxide semiconductor,crystal parts cannot be found.

When the amorphous oxide semiconductor is subjected to structuralanalysis by an out-of-plane method with an XRD apparatus, a peak thatshows a crystal plane does not appear. A halo pattern is observed whenthe amorphous oxide semiconductor is subjected to electron diffraction.Furthermore, a spot is not observed and only a halo pattern appears whenthe amorphous oxide semiconductor is subjected to nanobeam electrondiffraction.

There are various understandings of an amorphous structure. For example,a structure whose atomic arrangement does not have ordering at all maybe called a completely amorphous structure. Meanwhile, a structure thathas ordering within the nearest neighbor atomic distance or thesecond-nearest neighbor atomic distance but does not have long-rangeordering is also called an amorphous structure. Therefore, the strictestdefinition does not permit an oxide semiconductor to be called anamorphous oxide semiconductor as long as even a negligible degree ofordering is present in an atomic arrangement. At least an oxidesemiconductor having long-term ordering cannot be called an amorphousoxide semiconductor. Accordingly, because of the presence of crystalpart, for example, a CAAC-OS and an nc-OS cannot be called an amorphousoxide semiconductor or a completely amorphous oxide semiconductor.

Note that an oxide semiconductor may have a structure between the nc-OSand the amorphous oxide semiconductor. The oxide semiconductor havingsuch a structure is specifically referred to as an amorphous-like oxidesemiconductor (a-like OS).

In a high-resolution TEM image of the a-like OS, a void may be observed.Furthermore, in the high-resolution TEM image, there are a region wherea crystal part is clearly observed and a region where a crystal part isnot observed.

The a-like OS has an unstable structure because it includes a void. Toverify that an a-like OS has an unstable structure as compared with aCAAC-OS and an nc-OS, a change in structure caused by electronirradiation will be described below.

An a-like OS (referred to as Sample A), an nc-OS (referred to as SampleB), and a CAAC-OS (referred to as Sample C) are prepared as samplessubjected to electron irradiation. Each of the samples is an In—Ga—Znoxide.

First, a high-resolution cross-sectional TEM image of each sample isobtained. The high-resolution cross-sectional TEM images show that allthe samples have crystal parts.

Note that which part is regarded as a crystal part is determined asfollows. It is known that a unit cell of an InGaZnO₄ crystal has astructure in which nine layers including three In—O layers and sixGa—Zn—O layers are stacked in the c-axis direction. The distance betweenthe adjacent layers is equivalent to the lattice spacing on the (009)plane (also referred to as d value). The value is calculated to be 0.29nm from crystal structural analysis. Accordingly, a portion where thelattice spacing between lattice fringes is greater than or equal to 0.28nm and less than or equal to 0.30 nm is regarded as a crystal part ofInGaZnO₄. Each of lattice fringes corresponds to the a-b plane of theInGaZnO₄ crystal.

FIG. 9 shows change in the average size of crystal parts (at 22 pointsto 45 points) in each sample. Note that the crystal part sizecorresponds to the length of a lattice fringe. FIG. 9 indicates that thecrystal part size in the a-like OS increases with an increase in thecumulative electron dose. Specifically, as shown by (1) in FIG. 9, acrystal part of approximately 1.2 nm (also referred to as an initialnucleus) at the start of TEM observation grows to a size ofapproximately 2.6 nm at a cumulative electron dose of 4.2×10⁸ e⁻/nm². Incontrast, the crystal part size in the nc-OS and the CAAC-OS showslittle change from the start of electron irradiation to a cumulativeelectron dose of 4.2×10⁸ e⁻/nm². Specifically, as shown by (2) and (3)in FIG. 9, the average size of crystal parts in an nc-OS and a CAAC-OSare approximately 1.4 nm and approximately 2.1 nm, respectively,regardless of the cumulative electron dose.

In this manner, growth of the crystal part in the a-like OS is inducedby electron irradiation. In contrast, in the nc-OS and the CAAC-OS,growth of the crystal part is hardly induced by electron irradiation.Therefore, the a-like OS has an unstable structure as compared with thenc-OS and the CAAC-OS.

The a-like OS has a lower density than the nc-OS and the CAAC-OS becauseit includes a void. Specifically, the density of the a-like OS is higherthan or equal to 78.6% and lower than 92.3% of the density of the singlecrystal oxide semiconductor having the same composition. The density ofeach of the nc-OS and the CAAC-OS is higher than or equal to 92.3% andlower than 100% of the density of the single crystal oxide semiconductorhaving the same composition. Note that it is difficult to deposit anoxide semiconductor having a density of lower than 78% of the density ofthe single crystal oxide semiconductor.

For example, in the case of an oxide semiconductor having an atomicratio of In:Ga:Zn=1:1:1, the density of single crystal InGaZnO₄ with arhombohedral crystal structure is 6.357 g/cm³. Accordingly, in the caseof the oxide semiconductor having an atomic ratio of In:Ga:Zn=1:1:1, thedensity of the a-like OS is higher than or equal to 5.0 g/cm³ and lowerthan 5.9 g/cm³. For example, in the case of the oxide semiconductorhaving an atomic ratio of In:Ga:Zn=1:1:1, the density of each of thenc-OS and the CAAC-OS is higher than or equal to 5.9 g/cm³ and lowerthan 6.3 g/cm³.

Note that there is a possibility that an oxide semiconductor having acertain composition cannot exist in a single crystal structure. In thatcase, single crystal oxide semiconductors with different compositionsare combined at an adequate ratio, which makes it possible to estimatedensity equivalent to that of a single crystal oxide semiconductor withthe desired composition. The density of a single crystal oxidesemiconductor having the desired composition can be estimated using aweighted average according to the combination ratio of the singlecrystal oxide semiconductors with different compositions. Note that itis preferable to use as few kinds of single crystal oxide semiconductorsas possible to estimate the density.

As described above, oxide semiconductors have various structures andvarious properties. Note that an oxide semiconductor may be a stackincluding two or more of an amorphous oxide semiconductor, an a-like OS,a microcrystalline oxide semiconductor, and a CAAC-OS, for example.

A conductor is formed over the insulator 306, and an unnecessary portionof the conductor is etched to form a second gate electrode 331. Thesecond gate electrode can be formed using tantalum, tungsten, titanium,molybdenum, aluminum, copper, a molybdenum-tungsten alloy, tungstennitride, titanium nitride, or tantalum nitride, for example.Alternatively, a multilayer structure may be employed. Examples of thefilm formation method include a sputtering method, a CVD method, and anALD method.

Next, an insulator 307 is formed so as to cover the insulator 306 andthe second gate electrode 331. The insulator 307 can be formed using afilm and a film formation method that are similar to those used to formthe insulator 305 described above. An insulator that hardly allowsoxygen to pass therethrough is preferably used; for example, an aluminumoxide film is used.

An insulator 308 is formed over the insulator 307. The insulator 308 canbe formed using a film and a film formation method that are similar tothose used to form the insulator 301 described above. After theformation of the insulator 308, CMP is performed to planarize theinsulator 308.

Then, contact holes are formed in the insulator 308, the insulator 307,and the insulator 306 so as to reach the top surfaces of the source anddrain electrodes 312 a and 312 b.

Next, a conductor 314 and a conductor 315 are formed in this order. Theconductors 314 and 315 can be formed using tantalum, tungsten, titanium,molybdenum, aluminum, copper, a molybdenum-tungsten alloy, tungstennitride, titanium nitride, or tantalum nitride, for example. Examples ofthe film formation method include a sputtering method, a CVD method, andan ALD method.

Then, CMP is performed until the top surface of the insulator 308 isreached, whereby a plug composed of the conductors 314 and 315 isformed.

After that, a conductor 316 is formed over the conductor 315 and theinsulator 308. The conductor 316 can be formed using tantalum, tungsten,titanium, molybdenum, aluminum, copper, a molybdenum-tungsten alloy,tungsten nitride, titanium nitride, or tantalum nitride, for example.Alternatively, the conductor 316 may be a multilayer film. Examples ofthe film formation method include a sputtering method, a CVD method, andan ALD method. Then, an unnecessary portion of the conductor 316 isetched to form an electrode composed of the conductor 316.

Through the above steps, a semiconductor device including the transistorof one embodiment of the present invention can be manufactured.

At least part of this embodiment can be implemented in combination withany of the embodiments described in this specification as appropriate.

Embodiment 4

In this embodiment, an example of a semiconductor device using thetransistor described in Embodiment 3, which includes a back gateelectrode and a wiring layer prevented from being oxidized, will bedescribed.

FIG. 10A illustrates an example of a circuit of a storage device, andFIG. 10B is a cross-sectional view thereof.

As the substrate 350, a single crystal semiconductor substrate or apolycrystalline semiconductor substrate made of silicon, siliconcarbide, or the like; a compound semiconductor substrate made of silicongermanium and the like; a silicon-on-insulator (SOI) substrate; or thelike can be used.

The transistor 100 is formed over the substrate 350. The transistor 100can be a planar transistor including sidewalls 355 as illustrated inFIG. 10B. The transistor is subjected to element isolation by forming ashallow trench isolation (STI) 351. Alternatively, the transistor mayalternatively be such a Fin transistor as is illustrated in FIG. 11.Furthermore, the transistor 100 may be either a p-channel transistor oran n-channel transistor. Alternatively, both of them may be used.

Although a channel formation region of the transistor 100 includes asingle crystal silicon in this embodiment, a single crystal silicon isnot necessarily used; for example, an oxide semiconductor mayalternatively be used for the channel formation region. Furthermore, asan insulator 354 having a function as a gate insulator, silicon oxideobtained by thermally oxidizing a single crystal silicon can be used.

Alternatively, a silicon oxide film, a silicon oxynitride film, asilicon nitride oxide film, a silicon nitride film, an aluminum oxidefilm, an aluminum nitride film, a hafnium oxide film, or the like can beused. Examples of the film formation method include a thermal oxidationmethod, a CVD method, a sputtering method, an ALD method, a plasmaoxidation method, and a plasma nitridation method. Alternatively, astack of films appropriately selected from the films listed above may beused.

The insulator 360 is formed over the transistor 100, the STI 351, andthe diffusion layer 353, and CMP is performed to planarize a surface ofthe insulator 360. The insulator 360 can be formed using a silicon oxidefilm, a silicon oxynitride film, a silicon nitride oxide film, a siliconnitride film, an aluminum oxide film, an aluminum nitride film, ahafnium oxide film, or the like by a thermal oxidation method, a CVDmethod, a sputtering method, an ALD method, a plasma oxidation method, aplasma nitridation method, or the like. For the planarization, othertreatment may be employed instead of CMP, and CMP may be combined withetching (dry etching or wet etching), plasma treatment, or the like.

Contact holes that reach the top surfaces of the gate electrodes 330 ofthe transistor 100 and a contact hole that reaches the top surface ofthe diffusion layer 353 are formed in the insulator 360, a conductor isembedded in the contact holes, and CMP is performed until the topsurface of the insulator 360 is exposed, so that a plug 370, a plug 371,and a plug 372 are formed. The plugs 370, 371, and 372 can be formedusing tantalum, tungsten, titanium, molybdenum, aluminum, copper, or amolybdenum-tungsten alloy, for example. Alternatively, a stack of morethan one films appropriately selected from the films listed above may beformed. Examples of the film formation method include a sputteringmethod, a CVD method, an ALD method, and a plating method. For formationof the stack, more than one methods may be employed from among the aboveformation methods.

Next, a conductor is formed over the insulator 360, and a wiring layer373, a wiring layer 374, and a wiring layer 375 are formed. The wiringlayers 373, 374, and 375 can be formed using a film and a film formationmethod that are similar to those used to form the plugs 370, 371, and372 described above.

An insulator 361 is formed over the insulator 360 and the wiring layers373, 374, and 375, and CMP is performed to planarize a surface of theinsulator 361. The insulator 361 can be formed using a film and a filmformation method that are similar to those used to form the insulator360 described above.

Respective contact holes that reach the top surfaces of the wiringlayers 373, 374, and 375 and grooves are formed in the insulator 361,and a conductor is embedded in the contact holes and the grooves. Then,CMP is performed until the top surface of the insulator 361 is exposed,so that a wiring layer 376, a wiring layer 377, and a wiring layer 378that also serve as plugs are formed. The wiring layers 376, 377, and 378can be formed using a film and a film formation method that are similarto those used to form the plugs 370, 371, and 372 described above.

An insulator 362 is formed over the insulator 361 and the wiring layers376, 377, and 378, and a wiring layer 379, a wiring layer 380, and awiring layer 381 that also serve as plugs are formed by a method similarto that used to form the insulator 361. The insulator 362 can be formedusing a film and a film formation method that are similar to those usedto form the insulator 360 described above. The wiring layers 379, 380,and 381 can be formed using a film and a film formation method that aresimilar to those used to form the plugs 370, 371, and 372 describedabove. The wiring layers that also serve as plugs can be formed byrepeating the aforementioned method as necessary, so that a highlyintegrated semiconductor device can be manufactured.

An insulator 363 is formed over the insulator 362 and the wiring layers379, 380, and 381 with the use of a film and a film formation methodthat are similar to those used to form the insulator 360 describedabove. The insulator 363 preferably hardly allows hydrogen to passtherethrough. Note that the insulator 363 is not necessarily formed.

An insulator 302 is formed over the insulator 363, and a transistor 110is formed by the method described in Embodiment 3.

Next, the insulator 308 is formed, and a plug 382, a plug 383, and aplug 384 are formed. A wiring layer 385, a wiring layer 386, and awiring layer 387 are formed over the plug 382, the plug 383, and theplug 384, respectively.

Then, an insulator 364 is formed over the insulator 308 and the wiringlayers 385, 386, and 387, and CMP is performed to planarize a surface ofthe insulator 364. The insulator 364 can be formed using a film and afilm formation method that are similar to those used to form theinsulator 360 described above.

Contact holes that reach the top surfaces of the wiring layers 386 and387 are formed in the insulator 364, and a conductor is embedded in thecontact holes. Then, CMP is performed until the top surface of theinsulator 364 is exposed, so that a plug 388 and a plug 389 are formed.The plugs 388 and 389 can be formed using a film and a film formationmethod that are similar to those used to form the plugs 370, 371, and372 described above.

Then, a conductor is formed over the insulator 364, and one electrode341 of a capacitor 130 and a wiring layer 390 are formed. The electrode341 and the wiring layer 390 can be formed using a film and a filmformation method that are similar to those used to form the plugs 370,371, and 372 described above. Next, the capacitor 130 is formed suchthat the other electrode 342 overlaps with the one electrode 341 with aninsulator interposed therebetween. After that, an insulator 365 isformed, and CMP is performed to planarize a surface of the insulator365. The insulator 365 can be formed using a film and a film formationmethod that are similar to those used to form the insulator 360described above.

A contact hole that reaches the top surface of the other electrode 342of the capacitor 130 and a contact hole that reaches the top surface ofthe wiring layer 390 are formed in the insulator 365, and a conductor isembedded in the contact holes. Then, CMP is performed until the topsurface of the insulator 365 is exposed, so that a plug 391 and a plug392 are formed. The plugs 391 and 392 can be formed using a film and afilm formation method that are similar to those used to form the plugs370, 371, and 372 described above.

Next, a conductor is formed over the insulator 365, and a wiring layer393 and a wiring layer 394 are formed. The wiring layers 393 and 394 canbe formed using a film and a film formation method that are similar tothose used to form the plugs 370, 371, and 372 described above.

The capacitor 130 may be formed like a cylinder capacitor 140illustrated in FIG. 12 instead of the planar capacitor described inFIGS. 10A and 10B. The cylinder capacitor 140 is preferred to the planarcapacitor 130 because it can be formed in a smaller area.

Through the above steps, the semiconductor device in one embodiment ofthe present invention can be manufactured.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 5 <Imaging Device>

An imaging device of one embodiment of the present invention will bedescribed below.

FIG. 13A is a plan view illustrating an example of an imaging device 200of one embodiment of the present invention. The imaging device 200includes a pixel portion 210 and peripheral circuits for driving thepixel portion 210 (a peripheral circuit 260, a peripheral circuit 270, aperipheral circuit 280, and a peripheral circuit 290). The pixel portion210 includes a plurality of pixels 211 arranged in a matrix of p rowsand q columns (p and q are each an integer of 2 or more). The peripheralcircuit 260, the peripheral circuit 270, the peripheral circuit 280, andthe peripheral circuit 290 are each connected to a plurality of pixels211 and each have a function of supplying a signal for driving theplurality of pixels 211. In this specification and the like, in somecases, “a peripheral circuit” or “a driver circuit” indicate all of theperipheral circuits 260, 270, 280, and 290. For example, the peripheralcircuit 260 can be regarded as part of the peripheral circuit.

In addition, the imaging device 200 preferably includes a light source291. The light source 291 can emit detection light P1.

The peripheral circuit includes at least one of a logic circuit, aswitch, a buffer, an amplifier circuit, and a converter circuit. Theperipheral circuit may be provided over a substrate where the pixelportion 210 is formed. Part or the whole of the peripheral circuit maybe mounted using a semiconductor device such as an IC. Note that as theperipheral circuit, one or more of the peripheral circuits 260, 270,280, and 290 may be omitted.

As illustrated in FIG. 13B, the pixels 211 may be provided to beinclined in the pixel portion 210 included in the imaging device 200.When the pixels 211 are obliquely arranged, the distance between pixels(pitch) can be shortened in the row direction and the column direction.Accordingly, the quality of an image taken with the imaging device 200can be improved.

<Configuration Example 1 of Pixel>

The pixel 211 included in the imaging device 200 is formed with aplurality of subpixels 212, and each subpixel 212 is combined with afilter which transmits light with a specific wavelength band (colorfilter), whereby data for achieving color image display can be obtained.

FIG. 14A is a plan view showing an example of the pixel 211 with which acolor image is obtained. The pixel 211 illustrated in FIG. 14A includesa subpixel 212 provided with a color filter that transmits light with ared (R) wavelength band (also referred to as a subpixel 212R), asubpixel 212 provided with a color filter that transmits light with agreen (G) wavelength band (also referred to as a subpixel 212G), and asubpixel 212 provided with a color filter that transmits light with ablue (B) wavelength band (also referred to as a subpixel 212B). Thesubpixel 212 can function as a photosensor.

The subpixel 212 (the subpixel 212R, the subpixel 212G, and the subpixel212B) is electrically connected to a wiring 231, a wiring 247, a wiring248, a wiring 249, and a wiring 250. In addition, the subpixel 212R, thesubpixel 212G, and the subpixel 212B are connected to respective wirings253 which are independent from one another. In this specification andthe like, for example, the wiring 248 and the wiring 249 that areconnected to the pixel 211 in the n-th row are referred to as a wiring248[n] and a wiring 249[n]. For example, the wiring 253 connected to thepixel 211 in the m-th column is referred to as a wiring 253[m]. Notethat in FIG. 14A, the wirings 253 connected to the subpixel 212R, thesubpixel 212G, and the subpixel 212B in the pixel 211 in the m-th columnare referred to as a wiring 253[m]R, a wiring 253 [m]G, and a wiring253[m]B. The subpixels 212 are electrically connected to the peripheralcircuit through the above wirings.

The imaging device 200 has a structure in which the subpixel 212 iselectrically connected to the subpixel 212 in an adjacent pixel 211which is provided with a color filter that transmits light with the samewavelength band as the subpixel 212, via a switch. FIG. 14B shows aconnection example of the subpixels 212: the subpixel 212 in the pixel211 arranged in an n-th (n is an integer greater than or equal to 1 andless than or equal to p) row and an m-th (m is an integer greater thanor equal to 1 and less than or equal to q) column and the subpixel 212in the adjacent pixel 211 arranged in an (n+1)-th row and the m-thcolumn. In FIG. 14B, the subpixel 212R arranged in the n-th row and them-th column and the subpixel 212R arranged in the (n+1)-th row and them-th column are connected to each other via a switch 201. The subpixel212G arranged in the n-th row and the m-th column and the subpixel 212Garranged in the (n+1)-th row and the m-th column are connected to eachother via a switch 202. The subpixel 212B arranged in the n-th row andthe m-th column and the subpixel 212B arranged in the (n+1)-th row andthe m-th column are connected to each other via a switch 203.

The color filter used in the subpixel 212 is not limited to red (R),green (G), and blue (B) color filters, and color filters that transmitlight of cyan (C), yellow (Y), and magenta (M) may be used. By provisionof the subpixels 212 that sense light with three different wavelengthbands in one pixel 211, a full-color image can be obtained.

The pixel 211 including the subpixel 212 provided with a color filterthat transmits yellow (Y) light may be provided, in addition to thesubpixels 212 provided with the color filters that transmits red (R),green (G), and blue (B) light. The pixel 211 including the subpixel 212provided with a color filter that transmits blue (B) light may beprovided, in addition to the subpixels 212 provided with the colorfilters that transmits cyan (C), yellow (Y), and magenta (M) light. Whenthe subpixels 212 that sense light with four different wavelength bandsare provided in one pixel 211, the reproducibility of colors of anobtained image can be increased.

For example, in FIG. 14A, in regard to the subpixel 212 that senses ared wavelength band, the subpixel 212 that senses a green wavelengthband, and the subpixel 212 that senses a blue wavelength band, the pixelnumber ratio (or the light receiving area ratio) thereof is notnecessarily 1:1:1. For example, the Bayer arrangement in which the pixelnumber ratio (the light receiving area ratio) is set atred:green:blue=1:2:1 may be employed. Alternatively, the pixel numberratio (the light receiving area ratio) of red and green to blue may be1:6:1.

Although the number of subpixels 212 provided in the pixel 211 may beone, two or more subpixels are preferably provided. For example, whentwo or more subpixels 212 that senses the same wavelength band areprovided, the redundancy is increased, and the reliability of theimaging device 200 can be increased.

When an infrared (IR) filter that transmits infrared light and absorbsor reflects visible light is used as the filter, the imaging device 200that senses infrared light can be provided.

Furthermore, when a neutral density (ND) filter (dark filter) is used,output saturation which occurs when a large amount of light enters aphotoelectric conversion element (light-receiving element) can beprevented. With a combination of ND filters with different dimmingcapabilities, the dynamic range of the imaging device can be increased.

Besides the above-described filter, the pixel 211 may be provided with alens. An arrangement example of the pixel 211, a filter 254, and a lens255 will be described with reference to cross-sectional views in FIGS.15A and 15B. With the lens 255, the photoelectric conversion element canreceive incident light efficiently. Specifically, as illustrated in FIG.15A, light 256 enters a photoelectric conversion element 220 through thelens 255, the filter 254 (a filter 254R, a filter 254G, and a filter254B), a pixel circuit 230, and the like which are provided in the pixel211.

However, part of the light 256 indicated by arrows might be blocked bysome wirings 257 as indicated by a region surrounded with dashed-dottedlines. Thus, a preferable structure is that the lens 255 and the filter254 are provided on the photoelectric conversion element 220 side sothat the photoelectric conversion element 220 can efficiently receivethe light 256 as illustrated in FIG. 15B. When the light 256 enters thephotoelectric conversion element 220 from the photoelectric conversionelement 220 side, the imaging device 200 with high sensitivity can beprovided.

As the photoelectric conversion element 220 illustrated in FIGS. 15A and15B, a photoelectric conversion element in which a p-n junction or ap-i-n junction is formed may be used.

The photoelectric conversion element 220 may be formed using a substancethat has a function of absorbing a radiation and generating electriccharge. Examples of the substance that has a function of absorbing aradiation and generating electric charge include selenium, lead iodide,mercury iodide, gallium arsenide, cadmium telluride, and a cadmium-zincalloy.

For example, when selenium is used for the photoelectric conversionelement 220, the photoelectric conversion element 220 can have anabsorption coefficient of light in a wide wavelength range, such asvisible light, ultraviolet light, infrared light, X-rays, and gammarays.

One pixel 211 included in the imaging device 200 may include thesubpixel 212 with a first filter in addition to the subpixel 212illustrated in FIGS. 14A and 14B.

<Configuration Example 2 of Pixel>

An example of a pixel including a transistor using silicon and atransistor using an oxide semiconductor will be described below.

FIGS. 16A and 16B are each a cross-sectional view of an element includedin an imaging device. The imaging device illustrated in FIG. 16Aincludes a transistor 551 including silicon on a silicon substrate 500,transistors 552 and 553 which include an oxide semiconductor and arestacked over the transistor 551, and a photodiode 560 provided in asilicon substrate 500. The transistors and the photodiode 560 areelectrically connected to various plugs 570 and wirings 571. Inaddition, an anode 561 of the photodiode 560 is electrically connectedto the plug 570 through a low-resistance region 563.

The imaging device includes a layer 510 including the transistor 551provided on the silicon substrate 500 and the photodiode 560 provided inthe silicon substrate 500, a layer 520 which is in contact with thelayer 510 and includes the wirings 571, a layer 530 which is in contactwith the layer 520 and includes the transistors 552 and 553, and a layer540 which is in contact with the layer 530 and includes a wiring 572 anda wiring 573.

In the example of cross-sectional view in FIG. 16A, a light-receivingsurface of the photodiode 560 is provided on the side opposite to asurface of the silicon substrate 500 where the transistor 551 is formed.With this structure, a light path can be secured without an influence ofthe transistors and the wirings. Thus, a pixel with a high apertureratio can be formed. Note that the light-receiving surface of thephotodiode 560 can be the same as the surface where the transistor 551is formed.

In the case where a pixel is formed with the use of transistorsincluding an oxide semiconductor, the layer 530 may include thetransistors. Alternatively, the layer 510 may be omitted, and the pixelmay include only transistors including an oxide semiconductor.

In the case where a pixel is formed with the use of a transistorincluding silicon, the layer 530 may be omitted. An example of across-sectional view in which the layer 530 is not provided is shown inFIG. 16B.

Note that the silicon substrate 500 may be an SOI substrate.Furthermore, the silicon substrate 500 can be replaced with a substratemade of germanium, silicon germanium, silicon carbide, gallium arsenide,aluminum gallium arsenide, indium phosphide, gallium nitride, or anorganic semiconductor.

Here, an insulator 580 is provided between the layer 510 including thetransistor 551 and the photodiode 560 and the layer 530 including thetransistors 552 and 553. However, there is no limitation on the positionof the insulator 580.

Hydrogen in an insulator provided in the vicinity of a channel formationregion of the transistor 551 terminates dangling bonds of silicon;accordingly, the reliability of the transistor 551 can be improved. Incontrast, hydrogen in the insulator provided in the vicinity of thetransistor 552, the transistor 553, and the like becomes a factor thatgenerates a carrier in the oxide semiconductor. Thus, the hydrogen mightcause a reduction of the reliability of the transistor 552, thetransistor 553, and the like. Therefore, in the case where thetransistor using an oxide semiconductor is provided over the transistorusing a silicon-based semiconductor, it is preferable that the insulator580 having a function of blocking hydrogen be provided between thetransistors. When the hydrogen is confined below the insulator 580, thereliability of the transistor 551 can be improved. In addition, thehydrogen can be prevented from being diffused from a part below theinsulator 580 to a part above the insulator 580; thus, the reliabilityof the transistor 552, the transistor 553, and the like can beincreased.

For the insulator 580, the description of the insulator 363 is referredto, for example.

In the cross-sectional view in FIG. 16A, the photodiode 560 in the layer510 and the transistor in the layer 530 can be formed so as to overlapeach other. Thus, the degree of integration of pixels can be increased.In other words, the resolution of the imaging device can be increased.

As illustrated in FIG. 17A1 and FIG. 17B1, part or the whole of theimaging device can be bent. FIG. 17A1 illustrates the state in which theimaging device is bent in the direction of a dashed-dotted line X1-X2.FIG. 17A2 is a cross-sectional view taken along dashed-dotted line X1-X2in FIG. 17A1. FIG. 17A3 is a cross-sectional view taken alongdashed-dotted line Y1-Y2 in FIG. 17A1.

FIG. 17B1 illustrates the state where the imaging device is bent in thedirection of a dashed-dotted line X3-X4 and the direction of adashed-dotted line Y3-Y4. FIG. 17B2 is a cross-sectional view takenalong dashed-dotted line X3-X4 in FIG. 17B1. FIG. 17B3 is across-sectional view taken along dashed-dotted line Y3-Y4 in FIG. 17B1.

The bent imaging device enables the curvature of field and astigmatismto be reduced. Thus, the optical design of lens and the like, which isused in combination with the imaging device, can be facilitated. Forexample, the number of lens used for aberration correction can bereduced; accordingly, a reduction in the size or weight of electronicdevices using the imaging device, and the like, can be achieved. Inaddition, the quality of a captured image can be improved.

Embodiment 6

In this embodiment, an RF tag that includes the transistor described inthe above embodiment or the storage device described in the aboveembodiment will be described with reference to FIG. 18.

The RF tag of this embodiment includes a memory circuit, storesnecessary data in the memory circuit, and transmits and receives datato/from the outside with use of contactless means, for example, wirelesscommunication. The RF tag with these features can be used for anindividual authentication system in which an object or the like isrecognized by reading the individual information, for example. In orderthat the RF tag is used for such application, extremely high reliabilityis needed.

A configuration of the RF tag will be described with reference to FIG.18. FIG. 18 is a block diagram illustrating a configuration example ofan RF tag.

As shown in FIG. 18, an RF tag 800 includes an antenna 804 that receivesa radio signal 803 that is transmitted from an antenna 802 connected toa communication device 801 (also referred to as an interrogator, areader/writer, or the like). The RF tag 800 includes a rectifier circuit805, a constant voltage circuit 806, a demodulation circuit 807, amodulation circuit 808, a logic circuit 809, a memory circuit 810, and aROM 811. A transistor having a rectifying function included in thedemodulation circuit 807 may be formed using a material that enables areverse current to be low enough, for example, an oxide semiconductor.This can suppress reduction of a rectifying function due to generationof a reverse current and prevent saturation of the output from thedemodulation circuit. In other words, the input to the demodulationcircuit and the output from the demodulation circuit can have a relationcloser to a linear relation. Note that data transmission methods areroughly classified into the following three methods: an electromagneticcoupling method in which a pair of coils is provided so as to face eachother and communicates with each other by mutual induction, anelectromagnetic induction method in which communication is performedusing an induction field, and a radio wave method in which communicationis performed using a radio wave. Any of these methods can be used in theRF tag 800 described in this embodiment.

Next, the configuration of each circuit will be described. The antenna804 exchanges the radio signal 803 with the antenna 802 that isconnected to the communication device 801. The rectifier circuit 805generates an input potential by rectification, for example, half-wavevoltage doubler rectification of an input alternating signal generatedby reception of a radio signal at the antenna 804 and smoothing of therectified signal with a capacitor provided in a later stage in therectifier circuit 805. Note that a limiter circuit may be provided on aninput side or an output side of the rectifier circuit 805. The limitercircuit controls electric power so that electric power that is higherthan or equal to certain electric power is not input to a circuit in alater stage if the amplitude of the input alternating signal is high andan internal generation voltage is high.

The constant voltage circuit 806 generates a stable power supply voltagefrom an input potential and supplies it to each circuit. Note that theconstant voltage circuit 806 may include a reset signal generationcircuit. The reset signal generation circuit is a circuit that generatesa reset signal of the logic circuit 809 by utilizing rise of the stablepower supply voltage.

The demodulation circuit 807 demodulates the input alternating signal byenvelope detection and generates the demodulated signal. The modulationcircuit 808 performs modulation in accordance with data to be outputfrom the antenna 804.

The logic circuit 809 analyzes and processes the demodulated signal. Thememory circuit 810 holds the input data and includes a row decoder, acolumn decoder, a memory region, and the like. The ROM 811 stores anidentification number (ID) or the like and outputs it in accordance withprocessing.

Note that whether each circuit described above is provided can bedetermined as appropriate as needed.

Here, the memory circuit described in the above embodiment can be usedas the memory circuit 810. Since the memory circuit of one embodiment ofthe present invention can retain data even when not powered, the memorycircuit can be favorably used for an RF tag. In addition, the memorycircuit of one embodiment of the present invention needs power (voltage)needed for data writing significantly lower than that needed in aconventional nonvolatile memory; thus, it is possible to prevent adifference between the maximum communication range in data reading andthat in data writing. Furthermore, it is possible to suppressmalfunction or incorrect writing that is caused by power shortage indata writing.

Since the memory circuit of one embodiment of the present invention canbe used as a nonvolatile memory, it can also be used as the ROM 811. Inthis case, it is preferable that a manufacturer separately prepare acommand for writing data to the ROM 811 so that a user cannot rewritedata freely. Since the manufacturer gives identification numbers beforeshipment and then starts shipment of products, instead of puttingidentification numbers to all the manufactured RF tags, puttingidentification numbers only to good products to be shipped is possible.Thus, the identification numbers of the shipped products are in seriesand customer management corresponding to the shipped products is easilyperformed.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 7

In this embodiment, a CPU in which at least the transistor described inthe above embodiment can be used and the storage device described in theabove embodiment is included will be described.

FIG. 19 is a block diagram illustrating a configuration example of a CPUat least partly including any of the transistors described in the aboveembodiments as a component.

The CPU illustrated in FIG. 19 includes, over a substrate 1190, anarithmetic logic unit (ALU) 1191, an ALU controller 1192, an instructiondecoder 1193, an interrupt controller 1194, a timing controller 1195, aregister 1196, a register controller 1197, a bus interface 1198 (BUSI/F), a rewritable ROM 1199, and a ROM interface (ROM I/F) 1189. Asemiconductor substrate, an SOI substrate, a glass substrate, or thelike is used as the substrate 1190. The ROM 1199 and the ROM interface1189 may be provided over a separate chip. Needless to say, the CPU inFIG. 19 is just an example in which the configuration is simplified, andan actual CPU may have a variety of configurations depending on theapplication. For example, the CPU may have the following configuration:a structure including the CPU illustrated in FIG. 19 or an arithmeticcircuit is considered as one core; a plurality of the cores areincluded; and the cores operate in parallel. The number of bits that theCPU can process in an internal arithmetic circuit or in a data bus canbe 8, 16, 32, or 64, for example.

An instruction that is input to the CPU through the bus interface 1198is input to the instruction decoder 1193 and decoded therein, and then,input to the ALU controller 1192, the interrupt controller 1194, theregister controller 1197, and the timing controller 1195.

The ALU controller 1192, the interrupt controller 1194, the registercontroller 1197, and the timing controller 1195 conduct various controlsin response to the decoded instruction. Specifically, the ALU controller1192 generates signals for controlling the operation of the ALU 1191.While the CPU is executing a program, the interrupt controller 1194determines an interrupt request from an external input/output device ora peripheral circuit on the basis of its priority or a mask state, andprocesses the request. The register controller 1197 generates an addressof the register 1196, and reads/writes data from/to the register 1196 inaccordance with the state of the CPU.

The timing controller 1195 generates signals for controlling operationtimings of the ALU 1191, the ALU controller 1192, the instructiondecoder 1193, the interrupt controller 1194, and the register controller1197. For example, the timing controller 1195 includes an internal clockgenerator for generating an internal clock signal based on a referenceclock signal, and supplies the internal clock signal to the abovecircuits.

In the CPU illustrated in FIG. 19, a memory cell is provided in theregister 1196. For the memory cell of the register 1196, the transistordescribed in the above embodiment can be used.

In the CPU illustrated in FIG. 19, the register controller 1197 selectsoperation of retaining data in the register 1196 in accordance with aninstruction from the ALU 1191. That is, the register controller 1197selects whether data is retained by a flip-flop or whether it isretained by a capacitor in the memory cell included in the register1196. When data retaining by the flip-flop is selected, a power supplyvoltage is supplied to the memory cell in the register 1196. When dataretaining by the capacitor is selected, the data is rewritten in thecapacitor, and supply of the power supply voltage to the memory cell inthe register 1196 can be stopped.

FIG. 20 is an example of a circuit diagram of a memory circuit that canbe used as the register 1196. A memory circuit 1200 includes a circuit1201 in which stored data is volatile when power supply is stopped, acircuit 1202 in which stored data is nonvolatile even when power supplyis stopped, a switch 1203, a switch 1204, a logic element 1206, acapacitor 1207, and a circuit 1220 having a selecting function. Thecircuit 1202 includes a capacitor 1208, a transistor 1209, and atransistor 1210. Note that the memory circuit 1200 may further includeanother element such as a diode, a resistor, or an inductor, as needed.

Here, the storage device described in the above embodiment can be usedas the circuit 1202. When supply of a power supply voltage to the memorycircuit 1200 is stopped, a ground potential (0 V) or a potential atwhich the transistor 1209 in the circuit 1202 is turned off continues tobe input to a gate of the transistor 1209. For example, the gate of thetransistor 1209 is grounded through a load such as a resistor.

Shown here is an example in which the switch 1203 is a transistor 1213having one conductivity type (e.g., an n-channel transistor) and theswitch 1204 is a transistor 1214 having a conductivity type opposite tothe one conductivity type (e.g., a p-channel transistor). A firstterminal of the switch 1203 corresponds to one of a source and a drainof the transistor 1213, a second terminal of the switch 1203 correspondsto the other of the source and the drain of the transistor 1213, andconduction or non-conduction between the first terminal and the secondterminal of the switch 1203 (i.e., the on/off state of the transistor1213) is selected by a control signal RD input to a gate of thetransistor 1213. A first terminal of the switch 1204 corresponds to oneof a source and a drain of the transistor 1214, a second terminal of theswitch 1204 corresponds to the other of the source and the drain of thetransistor 1214, and conduction or non-conduction between the firstterminal and the second terminal of the switch 1204 (i.e., the on/offstate of the transistor 1214) is selected by the control signal RD inputto a gate of the transistor 1214.

One of a source and a drain of the transistor 1209 is electricallyconnected to one of a pair of electrodes of the capacitor 1208 and agate of the transistor 1210. Here, the connection portion is referred toas a node M2. One of a source and a drain of the transistor 1210 iselectrically connected to a wiring which can supply a low power supplypotential (e.g., a GND line), and the other thereof is electricallyconnected to the first terminal of the switch 1203 (the one of thesource and the drain of the transistor 1213). The second terminal of theswitch 1203 (the other of the source and the drain of the transistor1213) is electrically connected to the first terminal of the switch 1204(the one of the source and the drain of the transistor 1214). The secondterminal of the switch 1204 (the other of the source and the drain ofthe transistor 1214) is electrically connected to a wiring which cansupply a power supply potential VDD. The second terminal of the switch1203 (the other of the source and the drain of the transistor 1213), thefirst terminal of the switch 1204 (the one of the source and the drainof the transistor 1214), an input terminal of the logic element 1206,and one of a pair of electrodes of the capacitor 1207 are electricallyconnected to each other. Here, the connection portion is referred to asa node M1. The other of the pair of electrodes of the capacitor 1207 canbe supplied with a constant potential. For example, the other of thepair of electrodes of the capacitor 1207 can be supplied with a lowpower supply potential (e.g., GND) or a high power supply potential(e.g., VDD). The other of the pair of electrodes of the capacitor 1207is electrically connected to the wiring which can supply a low powersupply potential (e.g., a GND line). The other of the pair of electrodesof the capacitor 1208 can be supplied with a constant potential. Forexample, the other of the pair of electrodes of the capacitor 1208 canbe supplied with a low power supply potential (e.g., GND) or a highpower supply potential (e.g., VDD). The other of the pair of electrodesof the capacitor 1208 is electrically connected to the wiring which cansupply a low power supply potential (e.g., a GND line).

The capacitor 1207 and the capacitor 1208 are not necessarily providedas long as the parasitic capacitance of the transistor, the wiring, orthe like is actively utilized.

A control signal WE is input to the first gate (first gate electrode) ofthe transistor 1209. As for each of the switch 1203 and the switch 1204,a conduction state or a non-conduction state between the first terminaland the second terminal is selected by the control signal RD which isdifferent from the control signal WE. When one of the switches is in theconduction state between the first terminal and the second terminal, theother of the switches is in the non-conduction state between the firstterminal and the second terminal.

A signal corresponding to data retained in the circuit 1201 is input tothe other of the source and the drain of the transistor 1209. FIG. 20illustrates an example in which a signal output from the circuit 1201 isinput to the other of the source and the drain of the transistor 1209.The logic value of a signal output from the second terminal of theswitch 1203 (the other of the source and the drain of the transistor1213) is inverted by the logic element 1206, and the inverted signal isinput to the circuit 1201 through the circuit 1220.

In the example of FIG. 20, a signal output from the second terminal ofthe switch 1203 (the other of the source and the drain of the transistor1213) is input to the circuit 1201 through the logic element 1206 andthe circuit 1220; however, one embodiment of the present invention isnot limited thereto. The signal output from the second terminal of theswitch 1203 (the other of the source and the drain of the transistor1213) may be input to the circuit 1201 without its logic value beinginverted. For example, in the case where the circuit 1201 includes anode in which a signal obtained by inversion of the logic value of asignal input from the input terminal is retained, the signal output fromthe second terminal of the switch 1203 (the other of the source and thedrain of the transistor 1213) can be input to the node.

In FIG. 20, the transistors included in the memory circuit 1200 exceptthe transistor 1209 can each be a transistor in which a channel isformed in a layer formed using a semiconductor other than an oxidesemiconductor or in the substrate 1190. For example, the transistor canbe a transistor whose channel is formed in a silicon film or a siliconsubstrate. Alternatively, a transistor in which a channel is formed inan oxide semiconductor can be used for all the transistors in the memorycircuit 1200. Still alternatively, in the memory circuit 1200, atransistor in which a channel is formed in an oxide semiconductor can beincluded besides the transistor 1209, and a transistor in which achannel is formed in a layer formed using a semiconductor other than anoxide semiconductor or in the substrate 1190 can be used for the rest ofthe transistors.

As the circuit 1201 in FIG. 20, for example, a flip-flop circuit can beused. As the logic element 1206, for example, an inverter or a clockedinverter can be used.

In a period during which the memory circuit 1200 is not supplied with apower supply voltage, the semiconductor device of one embodiment of thepresent invention can retain data stored in the circuit 1201 by thecapacitor 1208 which is provided in the circuit 1202.

The off-state current of a transistor in which a channel is formed in anoxide semiconductor is extremely low. For example, the off-state currentof a transistor in which a channel is formed in an oxide semiconductoris significantly lower than that of a transistor in which a channel isformed in silicon having crystallinity. Thus, when the transistor isused as the transistor 1209, a signal held in the capacitor 1208 isretained for a long time also in a period during which a power supplyvoltage is not supplied to the memory circuit 1200. The memory circuit1200 can accordingly retain the stored content (data) also in a periodduring which the supply of the power supply voltage is stopped.

Since the above-described memory circuit performs pre-charge operationwith the switch 1203 and the switch 1204, the time required for thecircuit 1201 to retain original data again after the supply of the powersupply voltage is restarted can be shortened.

In the circuit 1202, a signal retained by the capacitor 1208 is input tothe gate of the transistor 1210. Therefore, after supply of the powersupply voltage to the memory circuit 1200 is restarted, the signalretained by the capacitor 1208 can be converted into the onecorresponding to the state (the on state or the off state) of thetransistor 1210 to be read from the circuit 1202. Consequently, anoriginal signal can be accurately read even when a potentialcorresponding to the signal retained by the capacitor 1208 varies tosome degree.

By using the above-described memory circuit 1200 for a storage devicesuch as a register or a cache memory included in a processor, data inthe storage device can be prevented from being lost owing to the stop ofthe supply of a power supply voltage. Furthermore, shortly after thesupply of the power supply voltage is restarted, the storage device canbe returned to the same state as that before the power supply isstopped. Therefore, the power supply can be stopped even for a shorttime in the processor or one or more of logic circuits included in theprocessor, resulting in lower power consumption.

Although the memory circuit 1200 is used in a CPU in this embodiment,the memory circuit 1200 can also be used in an LSI such as a digitalsignal processor (DSP), a custom LSI, or a programmable logic device(PLD), and a radio frequency tag (RF tag).

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 8 <Display Device>

A display device of one embodiment of the present invention will bedescribed below with reference to FIGS. 21A to 21C and FIGS. 22A and22B.

Examples of a display element provided in the display device include aliquid crystal element (also referred to as a liquid crystal displayelement) and a light-emitting element (also referred to as alight-emitting display element). The light-emitting element includes, inits category, an element whose luminance is controlled by a current orvoltage, and specifically includes, in its category, an inorganicelectroluminescent (EL) element, an organic EL element, and the like. Adisplay device including an EL element (EL display device) and a displaydevice including a liquid crystal element (liquid crystal displaydevice) will be described below as examples of the display device.

Note that the display device described below includes in its category apanel in which a display element is sealed and a module in which an ICsuch as a controller is mounted on the panel.

The display device described below refers to an image display device ora light source (including a lighting device). The display deviceincludes any of the following modules: a module provided with aconnector such as an FPC or TCP; a module in which a printed wiringboard is provided at the end of TCP; and a module in which an integratedcircuit (IC) is mounted directly on a display element by a COG method.

FIGS. 21A to 21C illustrate an example of an EL display device of oneembodiment of the present invention. FIG. 21A is a circuit diagram of apixel in an EL display device. FIG. 21B is a top plan view showing thewhole of the EL display device. FIG. 21C is a cross-sectional view takenalong part of dashed-dotted line M-N in FIG. 21B.

FIG. 21A illustrates an example of a circuit diagram of a pixel used inan EL display device.

Note that in this specification and the like, it may be possible forthose skilled in the art to constitute one embodiment of the inventioneven when portions to which all the terminals of an active element(e.g., a transistor or a diode), a passive element (e.g., a capacitor ora resistor), and the like are connected are not specified. In otherwords, one embodiment of the invention is clear even when connectionportions are not specified. Further, in the case where a connectionportion is disclosed in this specification and the like, it can bedetermined that one embodiment of the invention in which a connectionportion is not specified is disclosed in this specification and thelike, in some cases. In particular, in the case where the number ofportions to which the terminal is connected may be more than one, it isnot necessary to specify the portions to which the terminal isconnected. Therefore, it may be possible to constitute one embodiment ofthe invention by specifying only portions to which some of terminals ofan active element (e.g., a transistor or a diode), a passive element(e.g., a capacitor or a resistor), and the like are connected.

Note that in this specification and the like, it may be possible forthose skilled in the art to specify the invention when at least theconnection portion of a circuit is specified. Alternatively, it may bepossible for those skilled in the art to specify the invention when atleast a function of a circuit is specified. In other words, when afunction of a circuit is specified, one embodiment of the presentinvention is clear, and it can be determined that the embodiment isdisclosed in this specification and the like. Therefore, when aconnection portion of a circuit is specified, the circuit is disclosedas one embodiment of the invention even when a function is notspecified, and one embodiment of the invention can be constituted.Alternatively, when a function of a circuit is specified, the circuit isdisclosed as one embodiment of the invention even when a connectionportion is not specified, and one embodiment of the invention can beconstituted.

The EL display device illustrated in FIG. 21A includes a switchingelement 743, a transistor 741, a capacitor 742, and a light-emittingelement 719.

Note that FIG. 21A and the like each illustrate an example of a circuitconfiguration; therefore, a transistor can be provided additionally. Incontrast, for each node in FIG. 21A and the like, it is possible that anadditional transistor, switch, passive element, or the like not beprovided.

A gate of the transistor 741 is electrically connected to one terminalof the switching element 743 and one electrode of the capacitor 742. Asource of the transistor 741 is electrically connected to the otherelectrode of the capacitor 742 and one electrode of the light-emittingelement 719. A drain of the transistor 741 is supplied with a powersupply potential VDD. The other terminal of the switching element 743 iselectrically connected to a signal line 744. A constant potential issupplied to the other electrode of the light-emitting element 719. Theconstant potential is a ground potential GND or a potential lower thanthe ground potential GND.

It is preferable to use a transistor as the switching element 743. Whenthe transistor is used as the switching element, the area of a pixel canbe reduced, so that the EL display device can have high resolution. Asthe switching element 743, a transistor formed through the same step asthe transistor 741 can be used, so that EL display devices can bemanufactured with high productivity. Note that as the transistor 741and/or the switching element 743, any of the above-described transistorscan be used, for example.

FIG. 21B is a top plan view of the EL display device. The EL displaydevice includes a substrate 700, a substrate 750, a sealant 734, adriver circuit 735, a driver circuit 736, a pixel 737, and an FPC 732.The sealant 734 is provided between the substrate 700 and the substrate750 so as to surround the pixel 737, the driver circuit 735, and thedriver circuit 736. Note that the driver circuit 735 and/or the drivercircuit 736 may be provided outside the sealant 734.

FIG. 21C is a cross-sectional view of the EL display device taken alongpart of dashed-dotted line M-N in FIG. 21B.

FIG. 21C illustrates a structure of the transistor 741 including aninsulator 708 over the substrate 700; a conductor 704 a embedded in theinsulator 708; an insulator 712 a over the insulator 708 and theconductor 704 a; an insulator 712 b over the insulator 712 a; asemiconductor 706 that is over the insulator 712 b and overlaps with theconductor 704 a; a conductor 716 a and a conductor 716 b in contact withthe semiconductor 706; an insulator 718 a over the semiconductor 706,the conductor 716 a, and the conductor 716 b; an insulator 718 b overthe insulator 718 a; an insulator 718 c over the insulator 718 b; aninsulator 718 c over the insulator 718 b; and a conductor 714 a that isover the insulator 718 c and overlaps with the semiconductor 706. Notethat the structure of the transistor 741 is just an example; thetransistor 741 may have a structure different from that illustrated inFIG. 21C. The wiring layer formed by the method described in Embodiment1 can be used as the conductor 704 a.

Thus, in the transistor 741 illustrated in FIG. 21C, the conductor 704 aserves as a gate electrode, the insulator 712 a and the insulator 712 bserve as a gate insulator, the conductor 716 a serves as a sourceelectrode, the conductor 716 b serves as a drain electrode, theinsulator 718 a, the insulator 718 b, and the insulator 718 c serve as agate insulator, and the conductor 714 a serves as a gate electrode. Notethat in some cases, the electrical characteristics of the semiconductor706 change if light enters the semiconductor 706. To prevent this, it ispreferable that one or more of the conductor 704 a, the conductor 716 a,the conductor 716 b, and the conductor 714 a have a light-blockingproperty.

Note that the interface between the insulator 718 a and the insulator718 b is indicated by a broken line. This means that the boundarybetween them is not clear in some cases. For example, in the case wherethe insulator 718 a and the insulator 718 b are formed using insulatorsof the same kind, the insulator 718 a and the insulator 718 b are notdistinguished from each other in some cases depending on an observationmethod.

FIG. 21C illustrates a structure of the capacitor 742 including theinsulator 708 over the substrate; a conductor 704 b embedded in theinsulator 708; the insulator 712 a over the insulator 708 and theconductor 704 b; the insulator 712 b over the insulator 712 a; theconductor 716 a that is over the insulator 712 b and overlaps with theconductor 704 b; the insulator 718 a over the conductor 716 a; theinsulator 718 b over the insulator 718 a; the insulator 718 c over theinsulator 718 b; and a conductor 714 b that is over the insulator 718 cand overlaps with the conductor 716 a. In this structure, part of theinsulator 718 a and part of the insulator 718 b are removed in a regionwhere the conductor 716 a and the conductor 714 b overlap with eachother. The wiring layer formed by the method described in Embodiment 1can be used as the conductor 704 b.

In the capacitor 742, each of the conductor 704 b and the conductor 714b serves as one electrode, and the conductor 716 a serves as the otherelectrode.

Thus, the capacitor 742 can be formed using a film of the transistor741. The conductor 704 a and the conductor 704 b are preferablyconductors of the same kind, in which case the conductor 704 a and theconductor 704 b can be formed through the same step. Furthermore, theconductor 714 a and the conductor 714 b are preferably conductors of thesame kind, in which case the conductor 714 a and the conductor 714 b canbe formed through the same step.

The capacitor 742 illustrated in FIG. 21C has a large capacitance perunit area occupied by the capacitor. Therefore, the EL display deviceillustrated in FIG. 21C has high display quality. Note that although thecapacitor 742 illustrated in FIG. 21C has the structure in which thepart of the insulator 718 a and the part of the insulator 718 b areremoved to reduce the thickness of the region where the conductor 716 aand the conductor 714 b overlap with each other, the structure of thecapacitor of one embodiment of the present invention is not limited tothe structure. For example, a structure in which a part of the insulator718 c is removed to reduce the thickness of the region where theconductor 716 a and the conductor 714 b overlap with each other may beused.

An insulator 720 is provided over the transistor 741 and the capacitor742. Here, the insulator 720 may have an opening reaching the conductor716 a that serves as the source electrode of the transistor 741. Aconductor 781 is provided over the insulator 720. The conductor 781 maybe electrically connected to the transistor 741 through the opening inthe insulator 720.

A partition wall 784 having an opening reaching the conductor 781 isprovided over the conductor 781. A light-emitting layer 782 in contactwith the conductor 781 through the opening formed in the partition wall784 is provided over the partition wall 784. A conductor 783 is providedover the light-emitting layer 782. A region where the conductor 781, thelight-emitting layer 782, and the conductor 783 overlap with one anotherserves as the light-emitting element 719.

So far, examples of the EL display device are described. Next, anexample of a liquid crystal display device will be described.

FIG. 22A is a circuit diagram illustrating a configuration example of apixel of a liquid crystal display device. A pixel shown in FIGS. 22A and22B includes a transistor 751, a capacitor 752, and an element (liquidcrystal element) 753 in which a space between a pair of electrodes isfilled with liquid crystal.

One of a source and a drain of the transistor 751 is electricallyconnected to a signal line 755, and a gate of the transistor 751 iselectrically connected to a scan line 754.

One electrode of the capacitor 752 is electrically connected to theother of the source and the drain of the transistor 751, and the otherelectrode of the capacitor 752 is electrically connected to a wiring forsupplying a common potential.

One electrode of the liquid crystal element 753 is electricallyconnected to the other of the source and the drain of the transistor751, and the other electrode of the liquid crystal element 753 iselectrically connected to a wiring to which a common potential issupplied. The common potential supplied to the wiring electricallyconnected to the other electrode of the capacitor 752 may be differentfrom that supplied to the other electrode of the liquid crystal element753.

Note that the description of the liquid crystal display device is madeon the assumption that the top plan view of the liquid crystal displaydevice is similar to that of the EL display device. FIG. 22B is across-sectional view of the liquid crystal display device taken alongdashed-dotted line M-N in FIG. 21B. In FIG. 22B, the FPC 732 isconnected to the wiring 733 a via the terminal 731. Note that the wiring733 a may be formed using the same kind of conductor as the conductor ofthe transistor 751 or using the same kind of semiconductor as thesemiconductor of the transistor 751.

For the transistor 751, the description of the transistor 741 isreferred to. For the capacitor 752, the description of the capacitor 742is referred to. Note that the structure of the capacitor 752 in FIG. 22Bcorresponds to, but is not limited to, the structure of the capacitor742 in FIG. 21C.

Note that in the case where an oxide semiconductor is used as thesemiconductor of the transistor 751, the off-state current of thetransistor 751 can be extremely small. Therefore, an electric chargeheld in the capacitor 752 is unlikely to leak, so that the voltageapplied to the liquid crystal element 753 can be maintained for a longtime. Accordingly, the transistor 751 can be kept off during a period inwhich moving images with few motions or a still image are/is displayed,whereby power for the operation of the transistor 751 can be saved inthat period; accordingly a liquid crystal display device with low powerconsumption can be provided. Furthermore, the area occupied by thecapacitor 752 can be reduced; thus, a liquid crystal display device witha high aperture ratio or a high-resolution liquid crystal display devicecan be provided.

An insulator 721 is provided over the transistor 751 and the capacitor752. The insulator 721 has an opening reaching the transistor 751. Aconductor 791 is provided over the insulator 721. The conductor 791 iselectrically connected to the transistor 751 through the opening in theinsulator 721.

An insulator 792 serving as an alignment film is provided over theconductor 791. A liquid crystal layer 793 is provided over the insulator792. An insulator 794 serving as an alignment film is provided over theliquid crystal layer 793. A spacer 795 is provided over the insulator794. A conductor 796 is provided over the spacer 795 and the insulator794. A substrate 797 is provided over the conductor 796.

Owing to the above-described structure, a display device including acapacitor occupying a small area, a display device with high displayquality, or a high-resolution display device can be provided.

For example, in this specification and the like, a display element, adisplay device which is a device including a display element, alight-emitting element, and a light-emitting device which is a deviceincluding a light-emitting element can employ various modes or caninclude various elements. For example, the display element, the displaydevice, the light-emitting element, or the light-emitting deviceincludes at least one of an EL element (e.g., an EL element includingorganic and inorganic materials, an organic EL element, or an inorganicEL element), an LED (e.g., an LED for white, red, green, blue, or thelike), a transistor (a transistor that emits light depending on acurrent), an electron emitter, a liquid crystal element, ElectronicLiquid Powder (registered trademark) electronic ink, an electrophoreticelement, a grating light valve (GLV), a plasma display panel (PDP), adisplay element using micro electro mechanical system (MEMS), a digitalmicromirror device (DMD), a digital micro shutter (DMS), aninterferometric modulator display (IMOD) element, a MEMS shutter displayelement, an optical-interference-type MEMS display element, anelectrowetting element, a piezoelectric ceramic display, and a displayelement including a carbon nanotube. Display media whose contrast,luminance, reflectivity, transmittance, or the like is changed byelectrical or magnetic effect may be included.

Note that examples of display devices having EL elements include an ELdisplay. Examples of a display device including an electron emitterinclude a field emission display (FED), an SED-type flat panel display(SED: surface-conduction electron-emitter display), and the like.Examples of display devices including liquid crystal elements include aliquid crystal display (e.g., a transmissive liquid crystal display, atransflective liquid crystal display, a reflective liquid crystaldisplay, a direct-view liquid crystal display, or a projection liquidcrystal display). Examples of a display device having electronic ink,Electronic Liquid Powder (registered trademark), or an electrophoreticelement include electronic paper. In the case of a transflective liquidcrystal display or a reflective liquid crystal display, some of or allof pixel electrodes function as reflective electrodes. For example, someor all of pixel electrodes are formed to contain aluminum, silver, orthe like. In such a case, a memory circuit such as an SRAM can beprovided under the reflective electrodes. Thus, the power consumptioncan be further reduced.

Note that in the case of using an LED, graphene or graphite may beprovided under an electrode or a nitride semiconductor of the LED.Graphene or graphite may be a multilayer film in which a plurality oflayers are stacked. As described above, provision of graphene orgraphite enables easy formation of a nitride semiconductor thereover,such as an n-type GaN semiconductor including crystals. Furthermore, ap-type GaN semiconductor including crystals or the like can be providedthereover, and thus the LED can be formed. Note that an AlN layer may beprovided between the n-type GaN semiconductor including crystals andgraphene or graphite. The GaN semiconductors included in the LED may beformed by MOCVD. Note that when the graphene is provided, the GaNsemiconductor included in the LED can also be formed by a sputteringmethod.

Embodiment 9

The semiconductor device of one embodiment of the present invention canbe used for display devices, personal computers, or image reproducingdevices provided with recording media (typically, devices whichreproduce the content of recording media such as digital versatile discs(DVDs) and have displays for displaying the reproduced images). Otherexamples of electronic appliances that can be equipped with thesemiconductor device of one embodiment of the present invention arecellular phones, game machines including portable game machines,portable data terminals, e-book readers, cameras such as video camerasand digital still cameras, goggle-type displays (head mounted displays),navigation systems, audio reproducing devices (e.g., car audio systemsand digital audio players), copiers, facsimiles, printers, multifunctionprinters, automated teller machines (ATM), and vending machines. FIGS.23A to 23F illustrate specific examples of these electronic appliances.

FIG. 23A illustrates a portable game machine which includes a housing901, a housing 902, a display portion 903, a display portion 904, amicrophone 905, a speaker 906, an operation key 907, a stylus 908, andthe like. Although the portable game machine in FIG. 23A has the twodisplay portions 903 and 904, the number of display portions included ina portable game machine is not limited to this.

FIG. 23B illustrates a portable data terminal which includes a firsthousing 911, a second housing 912, a first display portion 913, a seconddisplay portion 914, a joint 915, an operation key 916, and the like.The first display portion 913 is provided in the first housing 911, andthe second display portion 914 is provided in the second housing 912.The first housing 911 and the second housing 912 are connected to eachother with the joint 915, and the angle between the first housing 911and the second housing 912 can be changed with the joint 915. An imagedisplayed on the first display portion 913 may be changed in accordancewith the angle at the joint 915 between the first housing 911 and thesecond housing 912. A display device with a position input function maybe used as at least one of the first display portion 913 and the seconddisplay portion 914. Note that the position input function can be addedby provision of a touch panel in a display device. Alternatively, theposition input function can be added by provision of a photoelectricconversion element called a photosensor in a pixel portion of a displaydevice.

FIG. 23C illustrates a notebook personal computer which includes ahousing 921, a display portion 922, a keyboard 923, a pointing device924, and the like.

FIG. 23D illustrates an electric refrigerator-freezer which includes ahousing 931, a refrigerator door 932, a freezer door 933, and the like.

FIG. 23E illustrates a video camera which includes a first housing 941,a second housing 942, a display portion 943, operation keys 944, a lens945, a joint 946, and the like. The operation keys 944 and the lens 945are provided in the first housing 941, and the display portion 943 isprovided in the second housing 942. The first housing 941 and the secondhousing 942 are connected to each other with the joint 946, and theangle between the first housing 941 and the second housing 942 can bechanged with the joint 946. Images displayed on the display portion 943may be switched in accordance with the angle at the joint 946 betweenthe first housing 941 and the second housing 942.

FIG. 23F illustrates a vehicle which includes a car body 951, wheels952, a dashboard 953, lights 954, and the like.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 10

In this embodiment, application examples of the RF tag of one embodimentof the present invention will be described with reference to FIGS. 24Ato 24F. The RF tag is widely used and can be provided for, for example,products such as bills, coins, securities, bearer bonds, documents(e.g., driver's licenses or resident's cards, see FIG. 24A), recordingmedia (e.g., DVDs or video tapes, see FIG. 24B), packaging containers(e.g., wrapping paper or bottles, see FIG. 24C), vehicles (e.g.,bicycles, see FIG. 24D), personal belongings (e.g., bags or glasses),foods, plants, clothing, household goods, medical supplies such asmedicine and chemicals, and electronic appliances (e.g., liquid crystaldisplay devices, EL display devices, television sets, or cellularphones), animals, human bodies, or tags on products (see FIGS. 24E and24F).

An RF tag 4000 of one embodiment of the present invention is fixed to aproduct by being attached to a surface thereof or embedded therein. Forexample, the RF tag 4000 is fixed to each product by being embedded inpaper of a book, or embedded in an organic resin of a package. Since theRF tag 4000 of one embodiment of the present invention can be reduced insize, thickness, and weight, it can be fixed to a product withoutspoiling the design of the product. Furthermore, bills, coins,securities, bearer bonds, documents, or the like can have anidentification function by being provided with the RF tag 4000 of oneembodiment of the present invention, and the identification function canbe utilized to prevent counterfeiting. Moreover, the efficiency of asystem such as an inspection system can be improved by providing the RFtag of one embodiment of the present invention for packaging containers,recording media, personal belongings, foods, clothing, household goods,electronic appliances, or the like. Vehicles can also have a higherlevel of security against theft or the like by being provided with theRF tag of one embodiment of the present invention.

As described above, by using the RF tag of one embodiment of the presentinvention for each application described in this embodiment, power foroperation such as writing or reading of data can be reduced, whichresults in an increase in the maximum communication distance. Moreover,data can be held for an extremely long period even in the state wherepower is not supplied; thus, the RF tag can be preferably used forapplication in which data is not frequently written or read.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Example 1

In Example 1, the wiring layer of Embodiment 1 was formed, and a crosssection thereof was observed with a scanning transmission electronmicroscope (STEM).

A thermal oxidation film was formed to a thickness of 400 nm over asingle crystal silicon wafer. Then, a silicon nitride film was formed toa thickness of 50 nm by a plasma CVD method. Then, a silicon oxynitridefilm was formed to a thickness of 150 nm by a plasma CVD method.

Next, resist patterning was performed by electron beam exposure to forma groove in the silicon oxynitride film. The groove was formed in thesilicon oxynitride film by a dry etching method using the resist patternas a mask.

The resist was removed, and then, a conductor was formed by a metal CVDmethod. Titanium nitride and tungsten were successively deposited inthis order to thicknesses of 5 nm and 200 nm, respectively.

Then, CMP was performed using slurry containing silica to removeportions of the tungsten and the titanium nitride that are located onthe silicon oxynitride film.

After CMP, washing was performed to remove slurry and particlesremaining on the substrate. The washing was performed in such a mannerthat the substrate was immersed in ozone water, brush washing wasperformed, washing with a diluted hydrofluoric acid was performed, andfinally, washing with pure water and drying were performed. Through theabove process, the sample was formed.

Cross sections of the sample that were taken along two directionsperpendicular to each other were observed with the STEM. FIG. 25A andFIGS. 25B and 25C are cross-sectional STEM images in two directionsperpendicular to each other.

The observation results reveal that an end of the titanium nitride as afirst conductor that is located at an end of the groove was at a levellower than or equal to that of the open side of the groove, and the topsurface of the tungsten as a second conductor was at a level lower thanor equal to that of the end of the titanium nitride, as in Embodiment 1.In addition, it was found that problems such as oxidation of tungstenand film separation due to the oxidation of tungsten were inhibited.

Example 2

In this example, a transistor illustrated in FIGS. 3A to 3C, whichincludes the wiring layer of Example 1 as a first gate electrode, wasfabricated and the transistor characteristics thereof were evaluated.

The channel length L of the transistor was 59 nm and the channel width Wwas 67 nm. First, the initial characteristics of the transistor weremeasured.

To evaluate the initial characteristics, a drain current (Id) wasmeasured at room temperature under the conditions that a source wasgrounded, a drain voltage (Vd) was fixed to 0.1 V, and a second gatevoltage (Vg) was varied in 0.1 V steps in the range from −3.0 V to +3.0V, and the variation curve was recorded. Then, the drain voltage wasfixed to 1.8 V, and the variation curves of the drain current wasrecorded similarly. At that time, the first gate electrode as a backgate was grounded. The results shown in FIG. 26A indicate that excellenton-state characteristics and off-state characteristics of the transistorwas able to be achieved.

Next, the characteristics of the same transistor were evaluated underthe condition that a voltage was applied to the first gate as a backgate. The potential (Vbg) of the first gate as a back gate was varied in2 V steps to −4 V, −2 V, 0 V, +2 V, and +4 V, the drain current wasmeasured under the same conditions as those for evaluation of theinitial characteristics, and the variation curves of the drain currentwere recorded. FIG. 26B shows the variation curves of the drain currentof the case where the potential of the first gate as a back gate wasvaried to −4 V, −2 V, 0 V, +2 V, and +4 V when the drain voltage was+0.1 V. FIG. 26C shows the variation curves of the drain current of thecase where the potential of the first gate as a back gate was varied to−4 V, −2 V, 0 V, +2 V, and +4 V when the drain voltage was +1.8 V.

When the voltage of the first gate as a back gate was varied in thenegative direction, the variation curve of the drain current shifted inthe positive direction. When the voltage of the first gate was varied inthe positive direction, the variation curve of the drain current shiftedin the negative direction. These suggest that the first gate electrodeserved as a back gate and the threshold voltage was able to becontrolled normally.

This application is based on Japanese Patent Application serial no.2014-202820 filed with Japan Patent Office on Oct. 1, 2014, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a stack ofplurality of insulating films; a first conductor; a second conductor; athird conductor; a fourth conductor; and a fifth conductor, wherein twoinsulating films in the stack of plurality of insulating films arecontact with each other via a surface which was polished by a CMPmethod, wherein the stack of plurality of insulating films comprises acontact hole which passes through the surface, wherein the firstconductor is in contact with the second conductor at a bottom of thecontact hole, wherein the third conductor is provided in the stack ofplurality of insulating films, wherein the first conductor is in contactwith a side surface of the third conductor, wherein the fourth conductoris provided over the stack of plurality of insulating films, wherein thefirst conductor is in contact with the fourth conductor, wherein thefifth conductor is provided in the stack of plurality of insulatingfilms, wherein each of a top surface of the fifth conductor, a sidesurface of the fifth conductor, and a bottom surface of the fifthconductor is in contact with different insulating films of the stack ofplurality of insulating films, and wherein the first conductor is not incontact with the fifth conductor.
 2. The semiconductor device accordingto claim 1, wherein the fifth conductor is in contact with oneinsulating film of the stack of plurality of insulating films via asurface on which CMP was performed.
 3. The semiconductor deviceaccording to claim 1, wherein the fifth conductor is provided in adifferent level from the third conductor.
 4. A semiconductor devicecomprising: a stack of plurality of insulating films; a first conductor;a second conductor; a third conductor; a fourth conductor; and a fifthconductor, wherein two insulating films in the stack of plurality ofinsulating films are contact with each other via a surface which waspolished by a CMP method, wherein the stack of plurality of insulatingfilms comprises a contact hole which passes through the surface, whereinthe first conductor is in contact with the second conductor at a bottomof the contact hole, wherein CMP was performed on a surface of thesecond conductor via which the second conductor is in contact with thefirst conductor, wherein the third conductor is provided in the stack ofplurality of insulating films, wherein the first conductor is in contactwith a side surface of the third conductor, wherein the fourth conductoris provided over the stack of plurality of insulating films, wherein thefirst conductor is in contact with the fourth conductor, wherein thefifth conductor is provided in the stack of plurality of insulatingfilms, wherein each of a top surface of the fifth conductor, a sidesurface of the fifth conductor, and a bottom surface of the fifthconductor is in contact with different insulating films of the stack ofplurality of insulating films, and wherein the first conductor is not incontact with the fifth conductor.
 5. The semiconductor device accordingto claim 4, wherein the fifth conductor is in contact with oneinsulating film of the stack of plurality of insulating films via asurface on which CMP was performed.
 6. The semiconductor deviceaccording to claim 4, wherein the fifth conductor is provided in adifferent level from the third conductor.